Could Silicon Solar Sensors Survive a Carrington-Type Event?

The objective of the present work is to study the effects of the damage produced by a Carrington-type event on silicon devices. Solar sensors were selected as an example for their simplicity. The Centro Atómico Constituyentes (CAC) method was applied to define the irradiation conditions. The results...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2022-06, Vol.69 (6), p.1236-1241
Main Authors: Moreno, Analia, Salazar, Martha Diaz, Kondratiuk, Nadia, Ibarra, Maria Lujan, Tamasi, Mariana, Alurralde, Martin, Bogado, Monica Martinez
Format: Article
Language:English
Subjects:
Argentinian satellites missions
Carrington event
Irradiation
Missions
Photovoltaic cells
Protons
Radiation
Radiation damage
Radiation effects
Satellites
Sensor phenomena and characterization
Sensors
Silicon
Silicon devices
silicon sun sensors
Solar sensors
Sun
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The objective of the present work is to study the effects of the damage produced by a Carrington-type event on silicon devices. Solar sensors were selected as an example for their simplicity. The Centro Atómico Constituyentes (CAC) method was applied to define the irradiation conditions. The results showed the extension of effects for this type of event on displacement-sensitive devices and will allow future satellite missions to design strategies to minimize radiation damage for this type of device in future satellite missions.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2022.3175434