Persistent xSPI STT-MRAM with up to 400MB/s Read and Write Throughput

We present the new generation of Everspin's STT-MRAM device with extended Serial Peripheral Interface (xSPI). The device is capable of persistent memory operation with random reads and writes while supporting page-buffered program and optional erase for compatibility with Serial NOR Flash proto...

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Bibliographic Details
Main Authors: Alam, S. M., Houssameddine, D., Neumeyer, F., Rahman, I., DeHerrera, M., Ikegawa, S., Sanchez, P., Zhang, X., Wang, Y., Williams, J., Gogl, D., Xu, H., Farook, M., Aceves, D., Lee, H. K., Mancoff, F. B., Chou, M., Tan, CH, Huang, B., Mukherjee, S., Lu, M., Shah, A., Nagel, K., Kim, Y., Aggarwal, S.
Format: Conference Proceeding
Language:English
Subjects:
Commercialization
Conferences
Low latency communication
persistent memory
Protocols
Random access memory
STT-MRAM
Throughput
xSPI
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Summary:We present the new generation of Everspin's STT-MRAM device with extended Serial Peripheral Interface (xSPI). The device is capable of persistent memory operation with random reads and writes while supporting page-buffered program and optional erase for compatibility with Serial NOR Flash protocol. MRAM technology has been optimized for the needed improvements to enable low-latency industrial applications. Two bank architecture with a new write scheme is employed for fast write providing up to 4 orders of magnitude write energy improvement over traditional NOR. We demonstrate full 64Mb die high-speed functionality with symmetric read and write throughput of up to 400MB/s.
ISSN:2573-7503
DOI:10.1109/IMW52921.2022.9779276