OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications

This paper discusses the development status of the memory cell element of OUM (Ovonic Unified Memory) - a chalcogenide-based, phase-change nonvolatile semiconductor memory technology at the 180 nm technology node. The device structure and characterization of the memory element will be reviewed. The...

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Bibliographic Details
Main Authors: Lai, S., Lowrey, T.
Format: Conference Proceeding
Language:English
Subjects:
CMOS logic circuits
CMOS process
CMOS technology
Costs
Logic devices
Low voltage
Nonvolatile memory
Phase change materials
Phased arrays
Random access memory
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Summary:This paper discusses the development status of the memory cell element of OUM (Ovonic Unified Memory) - a chalcogenide-based, phase-change nonvolatile semiconductor memory technology at the 180 nm technology node. The device structure and characterization of the memory element will be reviewed. The key characteristics of the technology will be discussed for ultra-high density, low voltage, high-speed programming, high cycle count, high read speed, and competitive cost structure nonvolatile memory for stand alone and embedded applications. This technology is inherently radiation resistant and is bit byte or word programmable without the requirement of Flash-like block erase. Low voltage and energy operation make OUM an attractive candidate for mobile applications.
DOI:10.1109/IEDM.2001.979636