Experimental verification of the principle of operation of Si and SiGe resistor load flip-flop and Si resistor load ring oscillator of n channel vertical dual carrier field effect transistor

The principle of operation of Si and SiGe resistor load flip flops and Si resistor load ring oscillators of n channel vertical dual carrier field effect transistors are reviewed. Measured data from experimental verification of the principle of operation is presented.

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Bibliographic Details
Main Authors: Li, G.H., Yan, F.Z., Han, D.J., Ji, C.Z., Zou, D.S., Xu, P., Yang, Y.H., Huang, C., Huang, D.H.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
FETs
Flip-flops
Germanium silicon alloys
Millimeter wave technology
Propagation delay
Resistors
Ring oscillators
Signal processing
Silicon germanium
Online Access:Request full text
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Description
Summary:The principle of operation of Si and SiGe resistor load flip flops and Si resistor load ring oscillators of n channel vertical dual carrier field effect transistors are reviewed. Measured data from experimental verification of the principle of operation is presented.
DOI:10.1109/ICSICT.2001.981539