Characterization-oriented design of E-band Variable-Gain Amplifiers in BiCMOS technology

Design and characterization of both a single-stage and a 2-stage Variable Gain Amplifier operating at E- Band is presented. Characterization issues of differential RF amplifiers are discussed, and integrated input and output baluns seem to be an easy solution for on-chip or on-board preliminary char...

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Bibliographic Details
Main Authors: Amendola, G., Boccia, L., Centurelli, F., Ciccognani, W., Limiti, E., Mustacchio, C., Tommasino, P., Trifiletti, A.
Format: Conference Proceeding
Language:English
Subjects:
Backhaul
Baluns
BiCMOS integrated circuits
E-band
Gain control
Gain measurement
Radio frequency
Scattering parameters
SiGe
System-on-chip
Variable gain amplifier
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Summary:Design and characterization of both a single-stage and a 2-stage Variable Gain Amplifier operating at E- Band is presented. Characterization issues of differential RF amplifiers are discussed, and integrated input and output baluns seem to be an easy solution for on-chip or on-board preliminary characterization by standard 2-port Network Analyzer. Amplifiers have been prototyped in a SiGe BiCMOS commercial technology, and exhibit about 22 dB of gain control range. After balun de-embedding, more than 10 dB of maximum gain has been also demonstrated for both amplifiers.
ISSN:2157-9830
DOI:10.1109/MMS55062.2022.9825549