Modeling high-energy heavy-ion damage in silicon

We identify a discrepancy between experimental data and model predictions by a widely used radiation transport code, SRIM. We describe a method for determining the implant and damage profiles of energetic heavy ions that better agrees with experimental data than SRIM Monte Carlo predictions. Results...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2001-12, Vol.48 (6), p.2136-2139
Main Authors: Spratt, J.P., Burke, E.A., Pickel, J.C., Leadon, R.E.
Format: Article
Language:English
Subjects:
Computer simulation
Damage
Helium
Implants
Ion beams
Ion implantation
Mathematical models
Monte Carlo methods
Particle accelerators
Predictive models
Radiation detectors
Radiation transport
Reinforced reaction injection molding
Silicon
Solid state circuits
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Summary:We identify a discrepancy between experimental data and model predictions by a widely used radiation transport code, SRIM. We describe a method for determining the implant and damage profiles of energetic heavy ions that better agrees with experimental data than SRIM Monte Carlo predictions. Results of our method are given and compared to experimental data for a range of ion types and energies. Finally, the reason for discrepancy is discussed.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.983185