Electric Field and Its Effect on Hot Carriers in InGaAs Valley Photovoltaic Devices

Power- and bias-dependent photoluminescence measurements are performed on devices with 25 and 100 nm InGaAs absorber layers to study the influence of the electric field on the maintenance and temperature of hot-carrier populations in valley photovoltaic III-V heterostructures. Photoluminescence and...

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Bibliographic Details
Published in:IEEE journal of photovoltaics 2022-09, Vol.12 (5), p.1175-1183
Main Authors: Dorman, Kyle R., Whiteside, Vincent R., Ferry, David K., Mishima, Tetsuya D., Yusuf, Israa, Esmaielpour, Hamidreza, Santos, Michael B., Sellers, Ian R.
Format: Article
Language:English
Subjects:
Electric fields
Electrical measurement
Heterostructures
Hot carriers
Hot-carrier solar cells
Indium gallium arsenide
intervalley scattering
Photoluminescence
Photovoltaic cells
Photovoltaic systems
Scattering
Sociology
Statistics
valley photovoltaics
Valleys
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Summary:Power- and bias-dependent photoluminescence measurements are performed on devices with 25 and 100 nm InGaAs absorber layers to study the influence of the electric field on the maintenance and temperature of hot-carrier populations in valley photovoltaic III-V heterostructures. Photoluminescence and current density versus voltage measurements indicate that the electric field increases the hot-carrier temperature as a result of its role in accelerating low-energy carriers to the upper valleys. The net result of this behavior is a power-dependent hot phonon bottleneck at all fluences irrespective of absorbed power with a nonzero power-independent hot-carrier population.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2022.3189781