Influence of waveguide composition on the efficiency of 940-980 nm InGaAs/AlGaAs/GaAs laser diodes

Approaches to improve the L- I characteristics of laser diodes emitting at 940-980 nm based on InGaAs/AlGaAs/GaAs separate confinement double heterostructures with an asymmetric broadened waveguide are studied. The influence of the waveguide composition on the lasers output characteristics is analyz...

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Bibliographic Details
Main Authors: Gultikov, N.V., Volkov, N.A., Telegin, K.Y., Bagaev, T.A., Andreev, A.Yu, Yarotskaya, I. V., Padalitsa, A.A., Ladugin, M.A., Marmalyuk, A.A., Shestak, L.I., Kozyrev, A.A., Panarin, V.A.
Format: Conference Proceeding
Language:English
Subjects:
asymmetric waveguide
Diode lasers
L-I characteristics
Optics
quantum well
semiconductor laser
Semiconductor lasers
Semiconductor waveguides
Thermal resistance
Voltage
wall-plug efficiency
Waveguide lasers
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Summary:Approaches to improve the L- I characteristics of laser diodes emitting at 940-980 nm based on InGaAs/AlGaAs/GaAs separate confinement double heterostructures with an asymmetric broadened waveguide are studied. The influence of the waveguide composition on the lasers output characteristics is analyzed. It is shown that a decrease in the energy depth of the QW leads to a decrease in series and thermal resistances and cut-off voltage that allows to improve output characteristics.
ISSN:2642-5580
DOI:10.1109/ICLO54117.2022.9840079