Contact resistance in organic thin film transistors

We present an analysis of the electrical characteristics of pentacene OTFTs fabricated on flexible polyethylene naphthalate (PEN) film. Nickel, silicon dioxide, and palladium were deposited by ion-beam sputtering and patterned by photolithography and lift-off to form the gate electrodes, the gate di...

Full description

Saved in:
Bibliographic Details
Main Authors: Klauk, H., Schmid, G.
Format: Conference Proceeding
Language:English
Subjects:
Contact resistance
Electric variables
Nickel
Organic thin film transistors
Palladium
Pentacene
Plastic films
Polyethylene
Silicon compounds
Thin film transistors
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present an analysis of the electrical characteristics of pentacene OTFTs fabricated on flexible polyethylene naphthalate (PEN) film. Nickel, silicon dioxide, and palladium were deposited by ion-beam sputtering and patterned by photolithography and lift-off to form the gate electrodes, the gate dielectric layer, and the source and drain contacts, respectively. An octadecyltrichlorosilane vapor prime was used to prepare the SiO/sub 2/ gate dielectric surface for the deposition of the pentacene layer, which was deposited by thermal evaporation and patterned using a water-soluble, photo-patterned polyvinyl alcohol layer.
DOI:10.1109/ISDRS.2001.984513