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A Wide Spectral Response Single Photon Avalanche Diode for Backside-Illumination in 55-nm CMOS Process
This article presents a wide-spectral response single photon avalanche diode (SPAD) designed and fabricated in advanced 55-nm CMOS image sensor technology. SPADs with different active areas and doping profiles are simulated by Sentaurus-TCAD to optimize their electrical and optical performances. A g...
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Published in: | IEEE transactions on electron devices 2022-09, Vol.69 (9), p.5041-5047 |
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creator | Liu, Yang Liu, Maliang Ma, Rui Hu, Jin Li, Dong Wang, Xiayu Zhu, Zhangming |
description | This article presents a wide-spectral response single photon avalanche diode (SPAD) designed and fabricated in advanced 55-nm CMOS image sensor technology. SPADs with different active areas and doping profiles are simulated by Sentaurus-TCAD to optimize their electrical and optical performances. A global well-sharing technique is employed to deliver a pixel pitch of 16.4 ~\mu \text{m} and a fill factor of 50.96% for a device with a 6 ~\mu \text{m} radius. The proposed structure is based on a p + /deep n-well (DNW) multiplication junction, extending its spectral response as much as possible. Compared to the existing BSI SPADs, a triple protection method is innovatively used to suppress premature edge breakdown and to reduce the dark count rate (DCR) through a combination of a virtual retrograde DNW, p-well guard ring, and a poly gate ring located above the shallow trench isolation. Furthermore, deep trench isolation is employed to suppress crosstalk. Samples of different radii from 2 to 6 ~\mu \text{m} are manufactured. The SPADs exhibit a low DCR below 20 cps/ \mu \text{m} 2 at room temperature and with a 2-V excess bias. The peak photon detection probability is 20.3% at 660 nm and is maintained at a high value, more than 10%, in the spectral range of 550-820 nm. |
doi_str_mv | 10.1109/TED.2022.3194488 |
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SPADs with different active areas and doping profiles are simulated by Sentaurus-TCAD to optimize their electrical and optical performances. A global well-sharing technique is employed to deliver a pixel pitch of <inline-formula> <tex-math notation="LaTeX">16.4 ~\mu \text{m} </tex-math></inline-formula> and a fill factor of 50.96% for a device with a <inline-formula> <tex-math notation="LaTeX">6 ~\mu \text{m} </tex-math></inline-formula> radius. The proposed structure is based on a p + /deep n-well (DNW) multiplication junction, extending its spectral response as much as possible. Compared to the existing BSI SPADs, a triple protection method is innovatively used to suppress premature edge breakdown and to reduce the dark count rate (DCR) through a combination of a virtual retrograde DNW, p-well guard ring, and a poly gate ring located above the shallow trench isolation. Furthermore, deep trench isolation is employed to suppress crosstalk. Samples of different radii from 2 to <inline-formula> <tex-math notation="LaTeX">6 ~\mu \text{m} </tex-math></inline-formula> are manufactured. The SPADs exhibit a low DCR below 20 cps/<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> 2 at room temperature and with a 2-V excess bias. The peak photon detection probability is 20.3% at 660 nm and is maintained at a high value, more than 10%, in the spectral range of 550-820 nm.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2022.3194488</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Avalanche diodes ; Backside-illuminated (BSI) technology ; CMOS ; CMOS image sensor (CIS) ; CMOS process ; Crosstalk ; detector ; Detectors ; Doping ; Geiger mode ; Junctions ; light detection and ranging (LiDAR) ; Photon avalanches ; Photonics ; Photons ; Room temperature ; single photon avalanche diode (SPAD) ; Single-photon avalanche diodes ; Spectral sensitivity ; Substrates</subject><ispartof>IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.5041-5047</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-323e79bdf6a884f096cf4c623af23b94fbbb492ae3c1dcbf30a404a05d2c4eee3</citedby><cites>FETCH-LOGICAL-c338t-323e79bdf6a884f096cf4c623af23b94fbbb492ae3c1dcbf30a404a05d2c4eee3</cites><orcidid>0000-0001-9012-5648 ; 0000-0003-3181-3277 ; 0000-0002-0368-3017 ; 0000-0001-5015-4989 ; 0000-0003-1421-6745 ; 0000-0002-7764-1928 ; 0000-0001-6981-0974</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9851621$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Liu, Yang</creatorcontrib><creatorcontrib>Liu, Maliang</creatorcontrib><creatorcontrib>Ma, Rui</creatorcontrib><creatorcontrib>Hu, Jin</creatorcontrib><creatorcontrib>Li, Dong</creatorcontrib><creatorcontrib>Wang, Xiayu</creatorcontrib><creatorcontrib>Zhu, Zhangming</creatorcontrib><title>A Wide Spectral Response Single Photon Avalanche Diode for Backside-Illumination in 55-nm CMOS Process</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[This article presents a wide-spectral response single photon avalanche diode (SPAD) designed and fabricated in advanced 55-nm CMOS image sensor technology. SPADs with different active areas and doping profiles are simulated by Sentaurus-TCAD to optimize their electrical and optical performances. A global well-sharing technique is employed to deliver a pixel pitch of <inline-formula> <tex-math notation="LaTeX">16.4 ~\mu \text{m} </tex-math></inline-formula> and a fill factor of 50.96% for a device with a <inline-formula> <tex-math notation="LaTeX">6 ~\mu \text{m} </tex-math></inline-formula> radius. The proposed structure is based on a p + /deep n-well (DNW) multiplication junction, extending its spectral response as much as possible. Compared to the existing BSI SPADs, a triple protection method is innovatively used to suppress premature edge breakdown and to reduce the dark count rate (DCR) through a combination of a virtual retrograde DNW, p-well guard ring, and a poly gate ring located above the shallow trench isolation. Furthermore, deep trench isolation is employed to suppress crosstalk. Samples of different radii from 2 to <inline-formula> <tex-math notation="LaTeX">6 ~\mu \text{m} </tex-math></inline-formula> are manufactured. The SPADs exhibit a low DCR below 20 cps/<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> 2 at room temperature and with a 2-V excess bias. The peak photon detection probability is 20.3% at 660 nm and is maintained at a high value, more than 10%, in the spectral range of 550-820 nm.]]></description><subject>Avalanche diodes</subject><subject>Backside-illuminated (BSI) technology</subject><subject>CMOS</subject><subject>CMOS image sensor (CIS)</subject><subject>CMOS process</subject><subject>Crosstalk</subject><subject>detector</subject><subject>Detectors</subject><subject>Doping</subject><subject>Geiger mode</subject><subject>Junctions</subject><subject>light detection and ranging (LiDAR)</subject><subject>Photon avalanches</subject><subject>Photonics</subject><subject>Photons</subject><subject>Room temperature</subject><subject>single photon avalanche diode (SPAD)</subject><subject>Single-photon avalanche diodes</subject><subject>Spectral sensitivity</subject><subject>Substrates</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEURYMoWKt7wU3A9dR8TZosa1u1UGmxFZdDJpPY1OlkTKaC_96UFleP9zj3XTgA3GI0wBjJh_V0MiCIkAHFkjEhzkAP5_kwk5zxc9BDCItMUkEvwVWM27RyxkgP2BH8cJWBq9boLqgavpnY-iami2s-awOXG9_5Bo5-VK0avTFw4nzirQ_wUemvmMLZrK73O9eoziXSNTDPs2YHx6-LFVwGr02M1-DCqjqam9Psg_en6Xr8ks0Xz7PxaJ5pSkWXUULNUJaV5UoIZpHk2jLNCVWW0FIyW5Ylk0QZqnGlS0uRYogplFdEM2MM7YP74982-O-9iV2x9fvQpMqCDFEuOEESJwodKR18jMHYog1up8JvgVFxsFkkm8XBZnGymSJ3x4hLNf-4FDnmBNM_CJ5wLw</recordid><startdate>20220901</startdate><enddate>20220901</enddate><creator>Liu, Yang</creator><creator>Liu, Maliang</creator><creator>Ma, Rui</creator><creator>Hu, Jin</creator><creator>Li, Dong</creator><creator>Wang, Xiayu</creator><creator>Zhu, Zhangming</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-9012-5648</orcidid><orcidid>https://orcid.org/0000-0003-3181-3277</orcidid><orcidid>https://orcid.org/0000-0002-0368-3017</orcidid><orcidid>https://orcid.org/0000-0001-5015-4989</orcidid><orcidid>https://orcid.org/0000-0003-1421-6745</orcidid><orcidid>https://orcid.org/0000-0002-7764-1928</orcidid><orcidid>https://orcid.org/0000-0001-6981-0974</orcidid></search><sort><creationdate>20220901</creationdate><title>A Wide Spectral Response Single Photon Avalanche Diode for Backside-Illumination in 55-nm CMOS Process</title><author>Liu, Yang ; Liu, Maliang ; Ma, Rui ; Hu, Jin ; Li, Dong ; Wang, Xiayu ; Zhu, Zhangming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-323e79bdf6a884f096cf4c623af23b94fbbb492ae3c1dcbf30a404a05d2c4eee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Avalanche diodes</topic><topic>Backside-illuminated (BSI) technology</topic><topic>CMOS</topic><topic>CMOS image sensor (CIS)</topic><topic>CMOS process</topic><topic>Crosstalk</topic><topic>detector</topic><topic>Detectors</topic><topic>Doping</topic><topic>Geiger mode</topic><topic>Junctions</topic><topic>light detection and ranging (LiDAR)</topic><topic>Photon avalanches</topic><topic>Photonics</topic><topic>Photons</topic><topic>Room temperature</topic><topic>single photon avalanche diode (SPAD)</topic><topic>Single-photon avalanche diodes</topic><topic>Spectral sensitivity</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Yang</creatorcontrib><creatorcontrib>Liu, Maliang</creatorcontrib><creatorcontrib>Ma, Rui</creatorcontrib><creatorcontrib>Hu, Jin</creatorcontrib><creatorcontrib>Li, Dong</creatorcontrib><creatorcontrib>Wang, Xiayu</creatorcontrib><creatorcontrib>Zhu, Zhangming</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Yang</au><au>Liu, Maliang</au><au>Ma, Rui</au><au>Hu, Jin</au><au>Li, Dong</au><au>Wang, Xiayu</au><au>Zhu, Zhangming</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Wide Spectral Response Single Photon Avalanche Diode for Backside-Illumination in 55-nm CMOS Process</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2022-09-01</date><risdate>2022</risdate><volume>69</volume><issue>9</issue><spage>5041</spage><epage>5047</epage><pages>5041-5047</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[This article presents a wide-spectral response single photon avalanche diode (SPAD) designed and fabricated in advanced 55-nm CMOS image sensor technology. SPADs with different active areas and doping profiles are simulated by Sentaurus-TCAD to optimize their electrical and optical performances. A global well-sharing technique is employed to deliver a pixel pitch of <inline-formula> <tex-math notation="LaTeX">16.4 ~\mu \text{m} </tex-math></inline-formula> and a fill factor of 50.96% for a device with a <inline-formula> <tex-math notation="LaTeX">6 ~\mu \text{m} </tex-math></inline-formula> radius. The proposed structure is based on a p + /deep n-well (DNW) multiplication junction, extending its spectral response as much as possible. Compared to the existing BSI SPADs, a triple protection method is innovatively used to suppress premature edge breakdown and to reduce the dark count rate (DCR) through a combination of a virtual retrograde DNW, p-well guard ring, and a poly gate ring located above the shallow trench isolation. Furthermore, deep trench isolation is employed to suppress crosstalk. Samples of different radii from 2 to <inline-formula> <tex-math notation="LaTeX">6 ~\mu \text{m} </tex-math></inline-formula> are manufactured. The SPADs exhibit a low DCR below 20 cps/<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> 2 at room temperature and with a 2-V excess bias. The peak photon detection probability is 20.3% at 660 nm and is maintained at a high value, more than 10%, in the spectral range of 550-820 nm.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2022.3194488</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-9012-5648</orcidid><orcidid>https://orcid.org/0000-0003-3181-3277</orcidid><orcidid>https://orcid.org/0000-0002-0368-3017</orcidid><orcidid>https://orcid.org/0000-0001-5015-4989</orcidid><orcidid>https://orcid.org/0000-0003-1421-6745</orcidid><orcidid>https://orcid.org/0000-0002-7764-1928</orcidid><orcidid>https://orcid.org/0000-0001-6981-0974</orcidid></addata></record> |
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subjects | Avalanche diodes Backside-illuminated (BSI) technology CMOS CMOS image sensor (CIS) CMOS process Crosstalk detector Detectors Doping Geiger mode Junctions light detection and ranging (LiDAR) Photon avalanches Photonics Photons Room temperature single photon avalanche diode (SPAD) Single-photon avalanche diodes Spectral sensitivity Substrates |
title | A Wide Spectral Response Single Photon Avalanche Diode for Backside-Illumination in 55-nm CMOS Process |
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