Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties

Amorphous oxide semiconductors (AOS) can be processed at low-temperature and their field-effect transistors (FETs) have demonstrated very low off-state current [1], offering promise for low-power back-end-of-line (BEOL) applications. Indium tin oxide (ITO) FETs have recently shown good characteristi...

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Bibliographic Details
Main Authors: Hoang, Lauren, Daus, Alwin, Wahid, Sumaiya, Kwon, Jimin, Ko, Jung-Soo, Qin, Shengjun, Islam, Mahnaz, Saraswat, Krishna C., Wong, H.-S Philip, Pop, Eric
Format: Conference Proceeding
Language:English
Subjects:
Degradation
Dielectric materials
Dielectrics
Field effect transistors
Hafnium compounds
Indium tin oxide
Logic gates
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Summary:Amorphous oxide semiconductors (AOS) can be processed at low-temperature and their field-effect transistors (FETs) have demonstrated very low off-state current [1], offering promise for low-power back-end-of-line (BEOL) applications. Indium tin oxide (ITO) FETs have recently shown good characteristics [2] and good mobility (>50 cm 2 V −1 s −1 [3]), but their stability and degradation remain unknown, e.g. given the mobility-stability trade-off in AOS [4], [5]. Here we investigate, for the first time, the influence of gate dielectric material and thickness on ITO-FET stability, which impacts bias stress through trap states. We find that HfO 2 is more stable than Al 2 O 3 as a gate dielectric for ITO FETs, which contradicts previous stability studies of other AOS.
ISSN:2640-6853
DOI:10.1109/DRC55272.2022.9855789