MFSFET with Ferroelectric HfN for Analog Memory Application

Ferroelectric HfO 2 (Fe-HfO 2 ) thin film has much attention for the Metal-Ferroelectrics-Si Field-Effect Transistor (MFSFET) application because of its Si compatibility [1], [2]. One of the critical issues of Fe-HfO 2 is the Si O2 interfacial layer (IL) formation which degrades the memory device ch...

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Bibliographic Details
Main Authors: Ohmi, S., Ihara, A., Tanuma, M., Pyo, J.Y., Shin, J.W.
Format: Conference Proceeding
Language:English
Subjects:
Insulators
Logic gates
Low voltage
Silicon
Silicon compounds
Thermodynamics
Transistors
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Summary:Ferroelectric HfO 2 (Fe-HfO 2 ) thin film has much attention for the Metal-Ferroelectrics-Si Field-Effect Transistor (MFSFET) application because of its Si compatibility [1], [2]. One of the critical issues of Fe-HfO 2 is the Si O2 interfacial layer (IL) formation which degrades the memory device characteristics [1]-[3]. We have reported the ferroelectric HfN (Fe-HfN) formed on Si(100) which is crystallized in rhombohedral phase [4], [5]. The IL formation is expected to be suppressed in case of Fe-HfN compared to Fe-HfO 2 from the thermodynamics point of view. In this paper, we have investigated the memory characteristics of MFSFETs utilizing Fe-HfN gate insulator. The effect of Si surface flattening process [6] was investigated to improve the interface property for analog memory application.
ISSN:2640-6853
DOI:10.1109/DRC55272.2022.9855792