An All-Silicon E-Band Backhaul-on-Glass Frequency Division Duplex Module with >24dBm PSAT & 8dB NF

E-Band Backhaul-on-Glass Frequency Division Duplex (FDD) modules combining SiGe BiCMOS transceivers (TRX) and power amplifiers (PA) with glass-integrated RF splitting/combining and diplexing are presented. The TRX ICs operate at 71-76 GHz (Low-Band) and 81-86 GHz (High-Band). The TX PSAT and RX NF o...

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Bibliographic Details
Main Authors: Shahramian, Shahriar, Holyoak, Michael, Zierdt, Mike, Sayginer, Mustafa, Weiner, Joe, Singh, Amit, Baeyens, Yves
Format: Conference Proceeding
Language:English
Subjects:
Backhaul
Diplexer
E-Band
Frequency conversion
Glass
mm-Wave
Phase shift keying
Power Amplifier
Power amplifiers
Radio frequency
Radiofrequency integrated circuits
SiGe
Silicon
Transceiver
Transceivers
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Description
Summary:E-Band Backhaul-on-Glass Frequency Division Duplex (FDD) modules combining SiGe BiCMOS transceivers (TRX) and power amplifiers (PA) with glass-integrated RF splitting/combining and diplexing are presented. The TRX ICs operate at 71-76 GHz (Low-Band) and 81-86 GHz (High-Band). The TX PSAT and RX NF of the FDD modules on average measure 24dBm and 8dB across the two operating bands. Each FDD module supports TX constellations up to 1024-QAM (
ISSN:2375-0995
DOI:10.1109/RFIC54546.2022.9863150