Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging

• Published in: IEEE transactions on power electronics 2023-01, Vol.38 (1), p.472-490
• Main Authors: Wang, Lisheng, Wang, Wenbo, Hueting, Raymond J. E., Rietveld, Gert, Ferreira, Jan Abraham
• Format: Article
• Language: English
• Subjects: Aluminum; Bonding; Challenges; Electronic devices; Energy gap; Failure modes; gallium nitride (GaN); Gallium nitrides; Integrated circuit interconnections; interconnection materials; Interconnections; Material properties; Packaging; Power semiconductor devices; Reliability; semiconductor device reliability; Semiconductors; Silicon; Silicon carbide; silicon carbide (SiC); topside interconnections; wide bandgap (WBG) semiconductors; Wire; Wires
• ISSN: 0885-8993; 1941-0107
• DOI: 10.1109/TPEL.2022.3200469

Due to their superior material properties, wide bandgap (WBG) semiconductors enable the application of power electronics at higher temperature operation, higher frequencies, and higher efficiencies compared to silicon (Si). However, the commonly-used aluminum wire bonding as topside interconnection technology prevents WBG semiconductors from reaching their full potential, due to inherent parasitic inductances, large size, heat dissipation, and reliability issues of wire bonding technology. Therefore, this article presents a comprehensive review of topside interconnection technologies of WBG semiconductor power devices and modules. First, the challenges and driving factors for the interconnection of WBG semiconductor dies are discussed. Second, for each widely commercially used WBG semiconductor, i.e., silicon carbide and gallium nitride, technical details and innovative features of state-of-the-art interconnection techniques in packages are reviewed. Then, the majority of existing topside interconnection materials for WBG semiconductors are categorized and compared, followed by a discussion of their advantages, challenges, and failure modes. Based on this elaborate discussion, potential future directions of the interconnection technology development are given. It is concluded that the superior performance of WBG semiconductors can be obtained by combining novel materials with innovative designs for the topside interconnections.