A Flip-Chip 180-GHz Receiver in 40-nm CMOS

This paper presents a 180-GHz direct conversion receiver in a standard 40-nm CMOS technology. The CMOS chip is flip-chip assembled to an integrated-passive-device carrier patch antenna for Gb/s wireless communications. The receiver includes a low-noise amplifier, a single-balanced mixer, a frequency...

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Bibliographic Details
Main Authors: Chen, Hong-Shen, Hu, Yu-Lun, Chang, Wei-Cheng, Liu, Jenny Yi-Chun
Format: Conference Proceeding
Language:English
Subjects:
antenna
Antenna measurements
Bandwidth
CMOS
doubler
flip-chip
Flip-chip devices
Frequency measurement
low-noise amplifiers
Microwave antennas
millimeter-wave
mixers
Receivers
Wireless communication
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Description
Summary:This paper presents a 180-GHz direct conversion receiver in a standard 40-nm CMOS technology. The CMOS chip is flip-chip assembled to an integrated-passive-device carrier patch antenna for Gb/s wireless communications. The receiver includes a low-noise amplifier, a single-balanced mixer, a frequency doubler, and an intermediate frequency amplifier. The demonstrated receiver consumes only 110 mW dc power. It shows a probed measured conversion gain of 28.1 dB and an IP 1dB of −32 dBm. The wireless measurement shows an intermediate frequency bandwidth of 5.5 GHz, supporting a multi-Gb/s wireless connectivity.
ISSN:2576-7216
DOI:10.1109/IMS37962.2022.9865425