Fan-out Wafer Level Packaging of GaN Traveling Wafer Amplifier

This paper presents a Fan-out Wafer Level Packaging technology, which was developed to package a GaN-based Traveling Wafer Amplifier. The innovative packaging approach embed the broadband high-power amplifier in an epoxy molding compound. The Fan-out package includes an in-package Cu-based heatsink...

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Bibliographic Details
Main Authors: Schwantuschke, D., Ture, E., Braun, T., Nguyen, T.D., Wohrmann, M., Pretl, M., Engels, S.
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Fan-out Wafer Level Packaging
GaN
Packaging
Power amplifiers
Power measurement
Radio frequency
Semiconductor device measurement
Thermal conductivity
Traveling wafer amplifier
Online Access:Request full text
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Summary:This paper presents a Fan-out Wafer Level Packaging technology, which was developed to package a GaN-based Traveling Wafer Amplifier. The innovative packaging approach embed the broadband high-power amplifier in an epoxy molding compound. The Fan-out package includes an in-package Cu-based heatsink which is directly attached to the metalized chip backside. S-parameter measurements raised from a realized demonstrator yield a linear gain of 10 dB in DC-pulsed and 8 dB in continuous wave operation, along with a bandwidth of 15 GHz. Large-signal measurements of the demonstrator result in a saturated output-power of more than 33 dB (2 W), along with a maximum power added efficiency of 10 %.
ISSN:2576-7216
DOI:10.1109/IMS37962.2022.9865579