Fan-out Wafer Level Packaging of GaN Traveling Wafer Amplifier

This paper presents a Fan-out Wafer Level Packaging technology, which was developed to package a GaN-based Traveling Wafer Amplifier. The innovative packaging approach embed the broadband high-power amplifier in an epoxy molding compound. The Fan-out package includes an in-package Cu-based heatsink...

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Main Authors: Schwantuschke, D., Ture, E., Braun, T., Nguyen, T.D., Wohrmann, M., Pretl, M., Engels, S.
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Fan-out Wafer Level Packaging
GaN
Packaging
Power amplifiers
Power measurement
Radio frequency
Semiconductor device measurement
Thermal conductivity
Traveling wafer amplifier
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creator Schwantuschke, D.
Ture, E.
Braun, T.
Nguyen, T.D.
Wohrmann, M.
Pretl, M.
Engels, S.
description This paper presents a Fan-out Wafer Level Packaging technology, which was developed to package a GaN-based Traveling Wafer Amplifier. The innovative packaging approach embed the broadband high-power amplifier in an epoxy molding compound. The Fan-out package includes an in-package Cu-based heatsink which is directly attached to the metalized chip backside. S-parameter measurements raised from a realized demonstrator yield a linear gain of 10 dB in DC-pulsed and 8 dB in continuous wave operation, along with a bandwidth of 15 GHz. Large-signal measurements of the demonstrator result in a saturated output-power of more than 33 dB (2 W), along with a maximum power added efficiency of 10 %.
doi_str_mv 10.1109/IMS37962.2022.9865579
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fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_9865579</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9865579</ieee_id><sourcerecordid>9865579</sourcerecordid><originalsourceid>FETCH-LOGICAL-i133t-c60d1f816b05735ee3fd0bfe46ac6b1124e84039de2ed8fd7a0cee65b99c46033</originalsourceid><addsrcrecordid>eNotj9tKw0AURUdBsK1-gQjzA4nnzOVM5kUoxdZCvIAVH8skOVNG0wtJFfx7K-3ThsVmbbYQtwg5Ivi7-dObdp5UrkCp3BdkrfNnYohE1nhCbc7FQFlHmVNIl2LY958AYAukgbifhk22_d7LjxC5kyX_cCtfQ_0VVmmzktsoZ-FZLrpw4P_gWBuvd22KibsrcRFD2_P1KUfiffqwmDxm5ctsPhmXWUKt91lN0GA8DFZgnbbMOjZQRTYUaqoQleHCgPYNK26K2LgANTPZyvvaEGg9EjdHb2Lm5a5L69D9Lk9f9R-9uEhZ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Fan-out Wafer Level Packaging of GaN Traveling Wafer Amplifier</title><source>IEEE Xplore All Conference Series</source><creator>Schwantuschke, D. ; Ture, E. ; Braun, T. ; Nguyen, T.D. ; Wohrmann, M. ; Pretl, M. ; Engels, S.</creator><creatorcontrib>Schwantuschke, D. ; Ture, E. ; Braun, T. ; Nguyen, T.D. ; Wohrmann, M. ; Pretl, M. ; Engels, S.</creatorcontrib><description>This paper presents a Fan-out Wafer Level Packaging technology, which was developed to package a GaN-based Traveling Wafer Amplifier. The innovative packaging approach embed the broadband high-power amplifier in an epoxy molding compound. The Fan-out package includes an in-package Cu-based heatsink which is directly attached to the metalized chip backside. S-parameter measurements raised from a realized demonstrator yield a linear gain of 10 dB in DC-pulsed and 8 dB in continuous wave operation, along with a bandwidth of 15 GHz. Large-signal measurements of the demonstrator result in a saturated output-power of more than 33 dB (2 W), along with a maximum power added efficiency of 10 %.</description><identifier>EISSN: 2576-7216</identifier><identifier>EISBN: 1665496134</identifier><identifier>EISBN: 9781665496131</identifier><identifier>DOI: 10.1109/IMS37962.2022.9865579</identifier><language>eng</language><publisher>IEEE</publisher><subject>Conductivity ; Fan-out Wafer Level Packaging ; GaN ; Packaging ; Power amplifiers ; Power measurement ; Radio frequency ; Semiconductor device measurement ; Thermal conductivity ; Traveling wafer amplifier</subject><ispartof>2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, 2022, p.579-582</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9865579$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,23930,23931,25140,27925,54555,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9865579$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Schwantuschke, D.</creatorcontrib><creatorcontrib>Ture, E.</creatorcontrib><creatorcontrib>Braun, T.</creatorcontrib><creatorcontrib>Nguyen, T.D.</creatorcontrib><creatorcontrib>Wohrmann, M.</creatorcontrib><creatorcontrib>Pretl, M.</creatorcontrib><creatorcontrib>Engels, S.</creatorcontrib><title>Fan-out Wafer Level Packaging of GaN Traveling Wafer Amplifier</title><title>2022 IEEE/MTT-S International Microwave Symposium - IMS 2022</title><addtitle>IMS</addtitle><description>This paper presents a Fan-out Wafer Level Packaging technology, which was developed to package a GaN-based Traveling Wafer Amplifier. The innovative packaging approach embed the broadband high-power amplifier in an epoxy molding compound. The Fan-out package includes an in-package Cu-based heatsink which is directly attached to the metalized chip backside. S-parameter measurements raised from a realized demonstrator yield a linear gain of 10 dB in DC-pulsed and 8 dB in continuous wave operation, along with a bandwidth of 15 GHz. Large-signal measurements of the demonstrator result in a saturated output-power of more than 33 dB (2 W), along with a maximum power added efficiency of 10 %.</description><subject>Conductivity</subject><subject>Fan-out Wafer Level Packaging</subject><subject>GaN</subject><subject>Packaging</subject><subject>Power amplifiers</subject><subject>Power measurement</subject><subject>Radio frequency</subject><subject>Semiconductor device measurement</subject><subject>Thermal conductivity</subject><subject>Traveling wafer amplifier</subject><issn>2576-7216</issn><isbn>1665496134</isbn><isbn>9781665496131</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2022</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj9tKw0AURUdBsK1-gQjzA4nnzOVM5kUoxdZCvIAVH8skOVNG0wtJFfx7K-3ThsVmbbYQtwg5Ivi7-dObdp5UrkCp3BdkrfNnYohE1nhCbc7FQFlHmVNIl2LY958AYAukgbifhk22_d7LjxC5kyX_cCtfQ_0VVmmzktsoZ-FZLrpw4P_gWBuvd22KibsrcRFD2_P1KUfiffqwmDxm5ctsPhmXWUKt91lN0GA8DFZgnbbMOjZQRTYUaqoQleHCgPYNK26K2LgANTPZyvvaEGg9EjdHb2Lm5a5L69D9Lk9f9R-9uEhZ</recordid><startdate>20220619</startdate><enddate>20220619</enddate><creator>Schwantuschke, D.</creator><creator>Ture, E.</creator><creator>Braun, T.</creator><creator>Nguyen, T.D.</creator><creator>Wohrmann, M.</creator><creator>Pretl, M.</creator><creator>Engels, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>20220619</creationdate><title>Fan-out Wafer Level Packaging of GaN Traveling Wafer Amplifier</title><author>Schwantuschke, D. ; Ture, E. ; Braun, T. ; Nguyen, T.D. ; Wohrmann, M. ; Pretl, M. ; Engels, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i133t-c60d1f816b05735ee3fd0bfe46ac6b1124e84039de2ed8fd7a0cee65b99c46033</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Conductivity</topic><topic>Fan-out Wafer Level Packaging</topic><topic>GaN</topic><topic>Packaging</topic><topic>Power amplifiers</topic><topic>Power measurement</topic><topic>Radio frequency</topic><topic>Semiconductor device measurement</topic><topic>Thermal conductivity</topic><topic>Traveling wafer amplifier</topic><toplevel>online_resources</toplevel><creatorcontrib>Schwantuschke, D.</creatorcontrib><creatorcontrib>Ture, E.</creatorcontrib><creatorcontrib>Braun, T.</creatorcontrib><creatorcontrib>Nguyen, T.D.</creatorcontrib><creatorcontrib>Wohrmann, M.</creatorcontrib><creatorcontrib>Pretl, M.</creatorcontrib><creatorcontrib>Engels, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Schwantuschke, D.</au><au>Ture, E.</au><au>Braun, T.</au><au>Nguyen, T.D.</au><au>Wohrmann, M.</au><au>Pretl, M.</au><au>Engels, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Fan-out Wafer Level Packaging of GaN Traveling Wafer Amplifier</atitle><btitle>2022 IEEE/MTT-S International Microwave Symposium - IMS 2022</btitle><stitle>IMS</stitle><date>2022-06-19</date><risdate>2022</risdate><spage>579</spage><epage>582</epage><pages>579-582</pages><eissn>2576-7216</eissn><eisbn>1665496134</eisbn><eisbn>9781665496131</eisbn><abstract>This paper presents a Fan-out Wafer Level Packaging technology, which was developed to package a GaN-based Traveling Wafer Amplifier. The innovative packaging approach embed the broadband high-power amplifier in an epoxy molding compound. The Fan-out package includes an in-package Cu-based heatsink which is directly attached to the metalized chip backside. S-parameter measurements raised from a realized demonstrator yield a linear gain of 10 dB in DC-pulsed and 8 dB in continuous wave operation, along with a bandwidth of 15 GHz. Large-signal measurements of the demonstrator result in a saturated output-power of more than 33 dB (2 W), along with a maximum power added efficiency of 10 %.</abstract><pub>IEEE</pub><doi>10.1109/IMS37962.2022.9865579</doi><tpages>4</tpages></addata></record>
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subjects Conductivity
Fan-out Wafer Level Packaging
GaN
Packaging
Power amplifiers
Power measurement
Radio frequency
Semiconductor device measurement
Thermal conductivity
Traveling wafer amplifier
title Fan-out Wafer Level Packaging of GaN Traveling Wafer Amplifier
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T22%3A34%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Fan-out%20Wafer%20Level%20Packaging%20of%20GaN%20Traveling%20Wafer%20Amplifier&rft.btitle=2022%20IEEE/MTT-S%20International%20Microwave%20Symposium%20-%20IMS%202022&rft.au=Schwantuschke,%20D.&rft.date=2022-06-19&rft.spage=579&rft.epage=582&rft.pages=579-582&rft.eissn=2576-7216&rft_id=info:doi/10.1109/IMS37962.2022.9865579&rft.eisbn=1665496134&rft.eisbn_list=9781665496131&rft_dat=%3Cieee_CHZPO%3E9865579%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i133t-c60d1f816b05735ee3fd0bfe46ac6b1124e84039de2ed8fd7a0cee65b99c46033%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=9865579&rfr_iscdi=true