EOS Endurance Power Circuits without Depletion Mode Devices

Electrical Overstress (EOS) avoiding power integrated circuits (ICs) are often designed with depletion mode NMOSFET. In some applications, there can be no depletion mode NMOSFETs. From device normal operations and EOS analyses, new circuits without depletion mode devices are successfully proposed fo...

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Bibliographic Details
Main Authors: Huang, Shao-Chang, Lee, Jian-Hsing, Li, Ching-Ho, Chen, Sue-Yi, Lin, Chih-Hsuan, Chen, Chun-Chih, Chen, Li-Fan, Lin, Gong-Kai, Wang, Chien-Wei, Hsu, Kai-Chieh, Chen, Szu-Chi, Pai, Shang-Chuan, Pai, Fu-Wei, Peng, Yin-Wei, Liao, Chih-Cherng, Chen, Ke-Horng
Format: Conference Proceeding
Language:English
Subjects:
Consumer electronics
Earth Observing System
MOSFET circuits
Power integrated circuits
Online Access:Request full text
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Summary:Electrical Overstress (EOS) avoiding power integrated circuits (ICs) are often designed with depletion mode NMOSFET. In some applications, there can be no depletion mode NMOSFETs. From device normal operations and EOS analyses, new circuits without depletion mode devices are successfully proposed for approaching device typical operations and EOS endurances.
ISSN:2575-8284
DOI:10.1109/ICCE-Taiwan55306.2022.9869061