Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion

In AlGaN/GaN high electron mobility transistors (HEMTs), the long-term operation of the device is adversely affected by threshold voltage ( {\text{V}_{\text{th}}} ) instability and current collapse. In this letter, using structural and electrical analyses, the impact of trapping and fluorine (F) inc...

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Bibliographic Details
Published in:IEEE electron device letters 2022-10, Vol.43 (10), p.1613-1616
Main Authors: Odabasi, Oguz, Ghobadi, Amir, Ulusoy Ghobadi, Turkan Gamze, Butun, Bayram, Ozbay, Ekmel
Format: Article
Language:English
Subjects:
AlGaN/GaN HEMT
Aluminum gallium nitrides
Annealing
Defect annealing
Electronics packaging
Fluorine
Gallium nitrides
HEMTs
High electron mobility transistors
Impact analysis
lag phenomena
Logic gates
MODFETs
Passivation
Performance evaluation
Semiconductor devices
stability
Stability analysis
Threshold voltage
transistor
Trapping
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Summary:In AlGaN/GaN high electron mobility transistors (HEMTs), the long-term operation of the device is adversely affected by threshold voltage ( {\text{V}_{\text{th}}} ) instability and current collapse. In this letter, using structural and electrical analyses, the impact of trapping and fluorine (F) inclusion on the device operation is scrutinized. It is found that SiNx interfacial layer significantly reduced the formation of defects, during the ohmic annealing process. Moreover, the incorporation of F ions into GaN bulk, during the gate etch process, triggers the virtual gate phenomenon. This effect has also been mitigated via the pre-gate annealing (PGA) process. As a result of these modifications, a stable operation with minimized lag performance has been achieved.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3203291