Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture

The 3D vertical ferroelectric tunneling junction (FTJ) of bilayer antiferroelectric (AFE) Hf 1-x Zr x O 2 (HZO) and Al 2 O 3 has been demonstrated for NAND-compatible feasibility. A bilayer-type FTJ is explored for the designs of the dielectric interlayer Al 2 O 3 0 nm to 4 nm and the ferroelectric...

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Bibliographic Details
Published in:IEEE electron device letters 2022-11, Vol.43 (11), p.1-1
Main Authors: Hsiang, K.-Y., Liao, C.-Y., Liu, J.-H., Lin, C.-Y., Lee, J.-Y., Lou, Z.-F., Chang, F.-S., Ray, W.-C., Li, Z.-X., Tseng, H.-C., Wang, C.-C., Liao, M. H., Hou, T.-H., Lee, M. H.
Format: Article
Language:English
Subjects:
Aluminum oxide
Antiferroelectric
Antiferroelectricity
Bilayers
Computer architecture
Feasibility
Ferroelectric
Ferroelectric materials
HfZrO<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2
Interlayers
Iron
Resistance
Resistors
Three-dimensional displays
Tunneling
Voltage
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Summary:The 3D vertical ferroelectric tunneling junction (FTJ) of bilayer antiferroelectric (AFE) Hf 1-x Zr x O 2 (HZO) and Al 2 O 3 has been demonstrated for NAND-compatible feasibility. A bilayer-type FTJ is explored for the designs of the dielectric interlayer Al 2 O 3 0 nm to 4 nm and the ferroelectric type, while the current mechanism is revealed. The multilevel AFE-FTJ is exhibited for both the Program and Erase operations and realizes a synaptic device. High-density emerging memory and computing-in-memory (CiM) are in high demanded for the future era and can be feasible by the proposed vertical FTJ.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3204445