Threshold Voltage Modeling of Negative Capacitance Double Gate TFET

An analytical gate threshold voltage model for Negative Capacitance Double Gate Tunnel Field Effect Transistor (NC-DG TFET) based on the physical definition of threshold voltage in TFETs is proposed in this paper. Analytical expressions for surface potential are derived using Gauss's law. The m...

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Bibliographic Details
Main Authors: Shikha, U S, James, Rekha K, Pradeep, Anju, Baby, Sumi, Jacob, Jobymol
Format: Conference Proceeding
Language:English
Subjects:
Double Gate structure
Negative Capacitance
Threshold voltage modeling
Tunnel Field Effect Transistors
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Summary:An analytical gate threshold voltage model for Negative Capacitance Double Gate Tunnel Field Effect Transistor (NC-DG TFET) based on the physical definition of threshold voltage in TFETs is proposed in this paper. Analytical expressions for surface potential are derived using Gauss's law. The model is validated by numerical simulation involving two dimensional TCAD simulation of DG TFET with one dimensional Landau-Khalatnikov (LK) equation. The model matches very well with the device simulation results. The impact of oxide dielectric variations, Ferro-Electric (FE) thickness variations are also studied in this paper.
ISSN:2380-6923
DOI:10.1109/VLSID2022.2022.00062