Fixture Design for Parasitic Capacitances of MOSFETs for EMI Applications

Due to the fast-switching nature of modern power converters, up to hundreds of MHz of common-mode noise can easily be generated. The characterization of switching components, e.g., Si MOSFETs, is essential for noise reduction. However, limited by the bandwidth of instruments, the voltage-dependent c...

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Bibliographic Details
Main Authors: Huang, Anfeng, Zhang, Hanyu, Du, Li, Lam, Cheung-Wei, Hwang, Chulsoon
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
Capacitance
Electromagnetic compatibility
Electromagnetic interference
Fixtures
Instruments
MOSFET
voltage-dependent capacitances
Online Access:Request full text
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Description
Summary:Due to the fast-switching nature of modern power converters, up to hundreds of MHz of common-mode noise can easily be generated. The characterization of switching components, e.g., Si MOSFETs, is essential for noise reduction. However, limited by the bandwidth of instruments, the voltage-dependent capacitances of high voltage MOSFETs are typically characterized at approximately 1 MHz, which is insufficient for EMI applications. In this paper, the measurement method and the test fixtures are presented. The measurement bandwidth is pushed to 30 MHz and higher, and frequency-dependent capacitances of a MOSFET are observed through measurements.
ISSN:2640-7469
DOI:10.1109/APEMC53576.2022.9888631