An 11-40-GHz High-Power Switch With Miniaturized High-Order Topology Using 100-nm GaN-on-Si HEMTs

This article proposes an ultrawideband switch with miniaturized high-order topology. A 100-nm gate-length GaN-on-Si process is used for high-power capability, and the modeling of the GaN high-electron-mobility transistors (HEMTs) is given to analyze its parasitic values. For wideband or high isolati...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2022-11, Vol.69 (11), p.6217-6224
Main Authors: Shen, Guangxu, Zhu, Haoshen, Xue, Quan, Che, Wenquan
Format: Article
Language:English
Subjects:
Couplings
Gallium nitrides
GaN-on-silicon
HEMTs
High electron mobility transistors
Inductors
Insertion loss
Inverters
miniaturization
MODFETs
monolithic microwave integrated circuit (MMIC)
RF switches
Semiconductor devices
Size reduction
Switching circuits
Tanks
Topology
Ultrawideband
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Summary:This article proposes an ultrawideband switch with miniaturized high-order topology. A 100-nm gate-length GaN-on-Si process is used for high-power capability, and the modeling of the GaN high-electron-mobility transistors (HEMTs) is given to analyze its parasitic values. For wideband or high isolation, the high-order switch is one solution, whose die area is naturally large. To address this issue, a miniaturized coupled-resonator switch topology was proposed using inverter transformation, where two parallel LC tanks and four inverters are replaced by two series LC tanks. Furthermore, a miniaturized coupling structure is introduced using a common inductor to replace three individual ones, contributing to an 86% size reduction. For demonstration, one 11-40.5-GHz single-pole single-throw (SPST) switch with four transmission poles (TPs) has been designed and fabricated. A small chip size of 0.32 mm2, low ON-state minimum insertion loss (IL) of 0.55 dB, and a high-power capability of 1.3 W are achieved.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3204511