A multiline InP-TRL kit for sub-mmWave characterization of InP-HEMT

We investigate the development of on-wafer multiline Thru-Reflect-Line calibration kits to enable transistor characterization beyond 110 GHz. The final objective is to measure the S parameters of a HEMT having a very high cut-off frequency (up to THz range). A first kit design shows that the use of...

Full description

Saved in:
Bibliographic Details
Main Authors: Younes, R., Wichmann, N., Lepilliet, S., Ducournau, G., Bollaert, S.
Format: Conference Proceeding
Language:English
Subjects:
Calibration
Cutoff frequency
Frequency measurement
HEMTs
Scattering parameters
Transistors
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigate the development of on-wafer multiline Thru-Reflect-Line calibration kits to enable transistor characterization beyond 110 GHz. The final objective is to measure the S parameters of a HEMT having a very high cut-off frequency (up to THz range). A first kit design shows that the use of configurations suitable for the frequency bands used in the calibration will optimize the measurements of THz transistors.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz50927.2022.9895722