Optimization of Nitrogen Ion Implantation Condition for \beta -Ga \text O \text Vertical MOSFETs via Process and Device Simulation

• Published in: IEEE transactions on electron devices 2022, p.1-8
• Main Authors: Kim, In Ki, Cha, Suhyeong, Hong, Sung-Min
• Format: Article
• Language: English
• Subjects: <inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> beta</tex-math> </inline-formula>-Ga<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _\text{2}</tex-math> </inline-formula>O<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _\text{3}</tex-math> </inline-formula> MOSFETs; power electronic device; technology computer-aided design (TCAD) simulation
• ISSN: 0018-9383
• DOI: 10.1109/TED.2022.3217717

In this work, nitrogen implantation conditions for a vertical \beta -Ga _\text{2} O _\text{3} MOSFET with a planar gate have been optimized to maximize the power figure of merit (PFOM) by performing extensive 2-D process and device technology computer-aided design (TCAD) simulations. The nitrogen implantation process conditions are optimized as the implantation energy of 300 keV and the maximum concentration of \text{1.1} \times \text{10}^{\text{19}} cm ^{-\text{3}} . With the optimized conditions, the device realizes the enhancement-mode (E-mode) operation with the threshold voltage of 3.84 V. The PFOM is optimized as 88.7 MW/cm ^\text{2} with the ON-resistance of 43.8 m \Omega /cm ^\text{2} and the breakdown voltage of 1963 V.