Forming-Free HfO } -Based Resistive Random Access Memory by X-Ray Irradiation

This work proposes forming-free HfO _{\text{2}} -based resistance random access memory (RRAM) using X-ray irradiation which overcomes the bottleneck of the conventional forming process, that of the need for a larger forming voltage with scaling. In addition, a large irradiation area is beneficial to...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2022, p.1-5
Main Authors: Wang, Yu-Bo, Chang, Ting-Chang, Lin, Shih-Kai, Wu, Pei-Yu, Zhang, Yong-Ci, Tan, Yung-Fang, Chen, Wen-Chung, Wu, Chung-Wei, Chou, Sheng-Yao, Zhou, Kuan-Ju, Sun, Li-Chuan, Tsai, Xin-Ying, Sze, Simon M.
Format: Article
Language:English
Subjects:
Current-fitting
Electrodes
forming-free
Hafnium oxide
irradiation
Performance evaluation
Radiation effects
Resistance
resistance random access memory (RRAM)
Switches
Voltage
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Summary:This work proposes forming-free HfO _{\text{2}} -based resistance random access memory (RRAM) using X-ray irradiation which overcomes the bottleneck of the conventional forming process, that of the need for a larger forming voltage with scaling. In addition, a large irradiation area is beneficial to the mass production of memory devices. This forming-free device has a better memory window compared to the device without X-ray irradiation. Moreover, the forming-free device has good reliability as the device without X-ray irradiation. To analyze the physical mechanism, the conduction mechanism was investigated by the current-fitting technique, and irradiation experiments with varying X-ray energies and times were performed. Finally, a physical model is proposed to explain the mechanism of the forming-free RRAM from X-ray irradiation.
ISSN:0018-9383
DOI:10.1109/TED.2022.3215932