Comparative Analysis of InGaAs/GaAs Quantum Dots Produced by Various Epitaxial Techniques

• Main Authors: Babichev, Andrey V., Komarov, Sergey D., Tkach, Julia S., Kryzhanovskaya, Natalia V., Nadtochiy, Alexey M., Blokhin, Alexey A., Blokhin, Sergei A., Nevedomskiy, Vladimir N., Maleev, Nikolay A., Gladyshev, Andrey G., Karachinsky, Leonid Ya, Novikov, Innokenty I.
• Format: Conference Proceeding
• Language: English
• Subjects: Epitaxial layers; gallium arsenide; InGaAs; metal-organic vapour-phase epitaxy; molecular-beam epitaxy; Quantum dot lasers; Quantum dots; Stationary state; Stranski-Krastanow mechanism; Temperature; Temperature measurement; Wavelength measurement
• ISSN: 2771-697X
• DOI: 10.1109/EExPolytech56308.2022.9951000

We present the results on the formation and micro-photoluminescence studies of In 0.63 Ga 0.37 As/GaAs quantum dots grown by metal-organic vapour-phase epitaxy and molecular-beam epitaxy by Stranski-Krastanow growth mode. The structure with single layer of quantum dots grown by the metal-organic vapour-phase epitaxy demonstrated a higher peak/integral photoluminescence intensity, as well as a smaller half-width of the photoluminescence spectrum from quantum dots in comparison with the structure with single layer of quantum dots grown by the molecular-beam epitaxy. Efficient low-temperature photoluminescence near 990 nm with a full width at half maximum of about 60 meV has been demonstrated for metal-organic vapour-phase epitaxy structure. The obtained results can be used for the formation of compact vertical micro cavity optically pumped laser arrays required for neuromorphic computation.