Investigation of the hot-carrier degradation in Si/SiGe HBT's by intrinsic low frequency noise source modeling

The characterization of the excess low-frequency noise (LFN) properties of electronic devices is a useful tool in the field of reliability physics, because LFN is related to the interactions between charge carriers and material imperfections and defects. The LFN behavior of a bipolar transistor can...

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Bibliographic Details
Main Authors: Borgarino, M., Kuchenbecker, J., Tartarin, J.G., Bary, L., Kovacic, T., Plana, R., Menozzi, R., Fantini, F., Graffeuil, J.
Format: Conference Proceeding
Language:English
Subjects:
Bipolar transistors
Charge carriers
Degradation
Germanium silicon alloys
Hot carriers
Life testing
Low-frequency noise
Materials reliability
Physics
Silicon germanium
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Summary:The characterization of the excess low-frequency noise (LFN) properties of electronic devices is a useful tool in the field of reliability physics, because LFN is related to the interactions between charge carriers and material imperfections and defects. The LFN behavior of a bipolar transistor can be described in terms of extrinsic or intrinsic noise sources. The noise representation based on intrinsic noise sources allows more insight, because each source is associated with a particular transistor region. The availability of an intrinsic noise source model therefore allows to locate the degradation occurring during a life test.
DOI:10.1109/GAASRW.2001.995726