Realization of Outstanding Stable 1S1R Behavior Based on Al-Doped NbO

• Published in: IEEE transactions on electron devices 2022, p.1-5
• Main Authors: Yang, Gaoqi, Chen, Ao, Liu, Nengfan, Ma, Guokun, Lin, Zhennan, Fu, Yuyang, Zhao, Xiaohu, Rao, Yiheng, Tao, Li, Wan, Houzhao, Duan, Jinxia, Shen, Liangping, Sun, Peng, Yang, Daohong, Wang, Hao
• Format: Article
• Language: English
• Subjects: Al-doped NbO<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\textit{x}}</tex-math> </inline-formula>; conductive filament; one-selector one-resistor (1S1R); uniformity
• ISSN: 0018-9383
• DOI: 10.1109/TED.2022.3224093

In this study, we proposed a remarkable one-selector one-resistor (1S1R) device with a single Al-doped NbO _{\textit{x}} layer, which performed reasonable resistance and switching voltages without degeneration, implying robust stability and outstanding uniformity. The measurements of dc and ac modes were applied to confirm the nonvolatility and effective storage performance. Besides that, a conduction model based on the results of the first principles calculations was proposed to explain the reason for the oxygen vacancies were generated more and tended to the cluster. Meanwhile, they were easier to migrate in Al-doped due to a lower barrier. These contributed to achieving stable conductive filaments as well as the switching process and improve uniformity and stability. Consequently, we developed an excellent 1S1R without an independent rectified cell, which has the potential for 3-D architecture.