Fully Integrating a 400 V-to-12 V DC-DC Converter in High-Voltage CMOS

This article presents the first fully integrated 400 V switching DC-DC converter. The converter topology exploits maximized dielectric energy storage at high voltage (HV) and significantly reduces the sidewall coupling of flying capacitors. The custom design of the HV capacitors and drivers further...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2023-03, Vol.58 (3), p.1-0
Main Authors: Daele, Tuur Van, Tavernier, Filip
Format: Article
Language:English
Subjects:
Capacitors
Circuits
CMOS
DC–DC converter
Energy storage
fully integrated
high power density
high voltage (HV)
High voltages
large conversion step
Step response
switched-capacitor (SC)
Topology
Voltage converters (DC to DC)
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Summary:This article presents the first fully integrated 400 V switching DC-DC converter. The converter topology exploits maximized dielectric energy storage at high voltage (HV) and significantly reduces the sidewall coupling of flying capacitors. The custom design of the HV capacitors and drivers further optimizes the performance. In addition, a control circuit improves the ripple and the load-step response, as proven by measurements. The converter is implemented in a 180 nm CMOS silicon on insulator (SOI) technology. While realizing a 33:1 conversion step, the measured power density is 119 mW/mm2 at 63.6 % efficiency. This advances the power density of fully integrated state-of-the-art converters by 270 \times and the maximum input voltage by 9 \times while achieving the highest efficiency.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2022.3223900