Transport properties of Si-doped \boldsymbol-\mathbf}\mathbf} grown by liquid-injection MOCVD

Gallium oxide belongs to wide bandgap semiconducting materials with high power and high voltage capabilities. In this work, Si-doped \ \beta-Ga_2 O_3 films were prepared using liquid injection metal organic chemical vapor deposition. Various growth conditions (O_{2} flow in deposition chamber, Si-co...

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Bibliographic Details
Main Authors: Egyenes, F., Gucmann, F., Dobrocka, E., Mikolasek, M., Husekova, K., Tapajna, M.
Format: Conference Proceeding
Language:English
Subjects:
Atmospheric measurements
Gallium
Liquids
Optical diffraction
Photonic band gap
Semiconductor device measurement
Temperature measurement
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Summary:Gallium oxide belongs to wide bandgap semiconducting materials with high power and high voltage capabilities. In this work, Si-doped \ \beta-Ga_2 O_3 films were prepared using liquid injection metal organic chemical vapor deposition. Various growth conditions (O_{2} flow in deposition chamber, Si-content in liquid precursor, and choice of Ga precursor) were tested with an aim to improve transport properties needed for electronic devices. X-ray diffraction was applied to study structural properties of the films. Thin films underwent UV-VIS transmittance and ellipsometry optical measurements to determine thin films bandgap energies and thickness, respectively. Van der Pauw measurement was used to extract thin films resistivity. Influence of oxygen-poor and oxygen-rich atmosphere during the growth on films resistivity was discussed and indicated possible role of oxygen vacancies on the electron transport of the prepared films. Finally, optimal growth conditions suitable for electronic device manufacture were identified.
ISSN:2474-9737
DOI:10.1109/ASDAM55965.2022.9966793