Free Standing Stress Amplification Structure for Ultrasensitive 3C-SiC/Si Pressure Sensor

This paper presents an innovative stress amplification approach for enhancing the sensitivity of piezoresistive pressure sensors. The structure consists of two pillars raised from the membrane supporting a released 3C-SiC micro-beam which acts as the sensing element. The proposed design was demonstr...

Full description

Saved in:
Bibliographic Details
Main Authors: Tong, Braiden, Nguyen, Hong-Quan, Nguyen, Tuan-Hung, Nguyen, Tuan-Khoa, Nguyen, Viet Thanh, Dinh, Toan, Vu, Trung-Hieu, Dau, Van Thanh, Dao, Dzung Viet
Format: Conference Proceeding
Language:English
Subjects:
Piezoresistance
Piezoresistive effect
Pressure sensor
Pressure sensors
Sensitivity
Silicon
Silicon carbide
Stress
Stress amplification
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents an innovative stress amplification approach for enhancing the sensitivity of piezoresistive pressure sensors. The structure consists of two pillars raised from the membrane supporting a released 3C-SiC micro-beam which acts as the sensing element. The proposed design was demonstrated using a 3C-SiC/Si heterostructure. Experimental results found our device highly sensitive, with a high sensitivity of 0.1328 kPa −1 . The sensitivity improvement was attributed to the stress-amplification phenomenon observed in our free-standing structure. Analytical and numerical methods confirmed that our device increases the stress/sensitivity by 750% over a traditional membrane structure.
ISSN:2168-9229
DOI:10.1109/SENSORS52175.2022.9967353