Bias-Free Operation of Type-II GaInAsSb/InP High Speed Uni-Traveling Carrier Photodiodes

We report the first bias-free operation of top-illuminated uniform Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes (UTC-PDs) for \lambda =1.55\mum. A record-high zero-bias bandwidth of 78 GHz was achieved. The device includes a 100 nm uniform Ga 0.81 In 0.19 As 0.65 Sb 0.35 absorber and 225 n...

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Bibliographic Details
Main Authors: Chaudhary, Rimjhim, Ostinelli, Olivier, Arabhavi, Akshay M., Bolognesi, Colombo.R.
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
bias-free
Cutoff frequency
Epitaxial layers
GaInAsSb
high-speed photodiode
III-V semiconductor materials
Indium phosphide
InP
Photodiodes
Photonics
quaternary absorber
Uni-traveling Carrier Photodiodes (UTC-PD)
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Summary:We report the first bias-free operation of top-illuminated uniform Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes (UTC-PDs) for \lambda =1.55\mum. A record-high zero-bias bandwidth of 78 GHz was achieved. The device includes a 100 nm uniform Ga 0.81 In 0.19 As 0.65 Sb 0.35 absorber and 225 nm uniform InP collector layer.
ISSN:2575-274X
DOI:10.1109/IPC53466.2022.9975445