A New Methodology to Analyze Carrier Transport Properties for InxGa1−xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation

Conventional techniques to characterize the carrier transport properties in high-electron-mobility transistors do not account for the effect of each individual unit process and device integration, and can be challenging to use for short-channel devices. To overcome this, we have developed a new tech...

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Published in:IEEE electron device letters 2023-02, Vol.44 (2), p.229-232
Main Authors: Kim, Hyo-Jin, Yoo, Ji-Hoon, Park, Wan-Soo, Yun, Seung-Won, Jo, Hyeon-Bhin, Lee, In-Geun, Kim, Tae-Woo, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Lee, Jae-Hak, Kim, Dae-Hyun
Format: Article
Language:English
Subjects:
Behavioral sciences
effective mobility
Electron mobility
HEMTs
InₓGa₂₋ₓAs and HEMT
Logic gates
MODFETs
saturation velocity
Transconductance
Velocity measurement
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container_issue 2
container_start_page 229
container_title IEEE electron device letters
container_volume 44
creator Kim, Hyo-Jin
Yoo, Ji-Hoon
Park, Wan-Soo
Yun, Seung-Won
Jo, Hyeon-Bhin
Lee, In-Geun
Kim, Tae-Woo
Tsutsumi, Takuya
Sugiyama, Hiroki
Matsuzaki, Hideaki
Lee, Jae-Hak
Kim, Dae-Hyun
description Conventional techniques to characterize the carrier transport properties in high-electron-mobility transistors do not account for the effect of each individual unit process and device integration, and can be challenging to use for short-channel devices. To overcome this, we have developed a new technique that consists of measurement and analysis of the transconductance scaling behavior. The proposed {g}_{m} modeling technique yielded the effective mobility, \mu _{n\_{}{\textit {eff}}} , and saturation velocity, {v}_{\textit {sat}} for fabricated InxGa _{{1}-{x}} As Quantum-Well (QW) HEMTs, correlating the carrier transport properties to the device characteristics. This helps illuminate the physics of the carrier transport properties of HEMTs from the mobility relevant to the velocity saturation regimes.
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fullrecord <record><control><sourceid>ieee</sourceid><recordid>TN_cdi_ieee_primary_9996140</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9996140</ieee_id><sourcerecordid>9996140</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-79cb8538b21f7bcad36bdf77762184b4df3606e2138864b1ce8ce3ec2218273f3</originalsourceid><addsrcrecordid>eNotjMtKAzEUQLNQsD72gpv8wNS8mswsh9oXtD6w4rJkMnfayDQpSYodv8C1H-DH-SUKdXXgHDgIXVPSp5QUt_PRXZ8RxvqccVJIeYJ6RAmacUrkGTqP8Y0QKoQSPfRd4nt4xwtIG1_71q87nDwunW67D8BDHYKFgJdBu7jzIeHH4HcQkoWIGx_wzB0mmv58fh3KiJ_22qX9NnuFtsVTu95koxZMCt7hha9sa1N3PNmYfIh4HPz2KIx39d4k7Qxg6_CzTvugk_XuEp02uo1w9c8L9DIeLYfTbP4wmQ3LeWapGqRMFabKBzyvGG1UZXTNZVU3SinJaC4qUTdcEgmM8jyXoqIGcgMcDPvLTPGGX6Cb49cCwGoX7FaHblUUhaSC8F-pHWpK</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A New Methodology to Analyze Carrier Transport Properties for InxGa1−xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Kim, Hyo-Jin ; Yoo, Ji-Hoon ; Park, Wan-Soo ; Yun, Seung-Won ; Jo, Hyeon-Bhin ; Lee, In-Geun ; Kim, Tae-Woo ; Tsutsumi, Takuya ; Sugiyama, Hiroki ; Matsuzaki, Hideaki ; Lee, Jae-Hak ; Kim, Dae-Hyun</creator><creatorcontrib>Kim, Hyo-Jin ; Yoo, Ji-Hoon ; Park, Wan-Soo ; Yun, Seung-Won ; Jo, Hyeon-Bhin ; Lee, In-Geun ; Kim, Tae-Woo ; Tsutsumi, Takuya ; Sugiyama, Hiroki ; Matsuzaki, Hideaki ; Lee, Jae-Hak ; Kim, Dae-Hyun</creatorcontrib><description><![CDATA[Conventional techniques to characterize the carrier transport properties in high-electron-mobility transistors do not account for the effect of each individual unit process and device integration, and can be challenging to use for short-channel devices. To overcome this, we have developed a new technique that consists of measurement and analysis of the transconductance scaling behavior. The proposed <inline-formula> <tex-math notation="LaTeX">{g}_{m} </tex-math></inline-formula> modeling technique yielded the effective mobility, <inline-formula> <tex-math notation="LaTeX">\mu _{n\_{}{\textit {eff}}} </tex-math></inline-formula>, and saturation velocity, <inline-formula> <tex-math notation="LaTeX">{v}_{\textit {sat}} </tex-math></inline-formula> for fabricated InxGa<inline-formula> <tex-math notation="LaTeX">_{{1}-{x}} </tex-math></inline-formula>As Quantum-Well (QW) HEMTs, correlating the carrier transport properties to the device characteristics. This helps illuminate the physics of the carrier transport properties of HEMTs from the mobility relevant to the velocity saturation regimes.]]></description><identifier>ISSN: 0741-3106</identifier><identifier>DOI: 10.1109/LED.2022.3230966</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Behavioral sciences ; effective mobility ; Electron mobility ; HEMTs ; InₓGa₂₋ₓAs and HEMT ; Logic gates ; MODFETs ; saturation velocity ; Transconductance ; Velocity measurement</subject><ispartof>IEEE electron device letters, 2023-02, Vol.44 (2), p.229-232</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-5769-4232 ; 0000-0003-0234-5080 ; 0000-0002-5078-606X ; 0000-0002-6659-9066 ; 0000-0001-7775-6680 ; 0000-0002-5629-4760 ; 0000-0002-6301-857X ; 0000-0002-8084-7281 ; 0000-0001-5332-5114 ; 0000-0002-0242-6983</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9996140$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27922,27923,54794</link.rule.ids></links><search><creatorcontrib>Kim, Hyo-Jin</creatorcontrib><creatorcontrib>Yoo, Ji-Hoon</creatorcontrib><creatorcontrib>Park, Wan-Soo</creatorcontrib><creatorcontrib>Yun, Seung-Won</creatorcontrib><creatorcontrib>Jo, Hyeon-Bhin</creatorcontrib><creatorcontrib>Lee, In-Geun</creatorcontrib><creatorcontrib>Kim, Tae-Woo</creatorcontrib><creatorcontrib>Tsutsumi, Takuya</creatorcontrib><creatorcontrib>Sugiyama, Hiroki</creatorcontrib><creatorcontrib>Matsuzaki, Hideaki</creatorcontrib><creatorcontrib>Lee, Jae-Hak</creatorcontrib><creatorcontrib>Kim, Dae-Hyun</creatorcontrib><title>A New Methodology to Analyze Carrier Transport Properties for InxGa1−xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description><![CDATA[Conventional techniques to characterize the carrier transport properties in high-electron-mobility transistors do not account for the effect of each individual unit process and device integration, and can be challenging to use for short-channel devices. To overcome this, we have developed a new technique that consists of measurement and analysis of the transconductance scaling behavior. The proposed <inline-formula> <tex-math notation="LaTeX">{g}_{m} </tex-math></inline-formula> modeling technique yielded the effective mobility, <inline-formula> <tex-math notation="LaTeX">\mu _{n\_{}{\textit {eff}}} </tex-math></inline-formula>, and saturation velocity, <inline-formula> <tex-math notation="LaTeX">{v}_{\textit {sat}} </tex-math></inline-formula> for fabricated InxGa<inline-formula> <tex-math notation="LaTeX">_{{1}-{x}} </tex-math></inline-formula>As Quantum-Well (QW) HEMTs, correlating the carrier transport properties to the device characteristics. This helps illuminate the physics of the carrier transport properties of HEMTs from the mobility relevant to the velocity saturation regimes.]]></description><subject>Behavioral sciences</subject><subject>effective mobility</subject><subject>Electron mobility</subject><subject>HEMTs</subject><subject>InₓGa₂₋ₓAs and HEMT</subject><subject>Logic gates</subject><subject>MODFETs</subject><subject>saturation velocity</subject><subject>Transconductance</subject><subject>Velocity measurement</subject><issn>0741-3106</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNotjMtKAzEUQLNQsD72gpv8wNS8mswsh9oXtD6w4rJkMnfayDQpSYodv8C1H-DH-SUKdXXgHDgIXVPSp5QUt_PRXZ8RxvqccVJIeYJ6RAmacUrkGTqP8Y0QKoQSPfRd4nt4xwtIG1_71q87nDwunW67D8BDHYKFgJdBu7jzIeHH4HcQkoWIGx_wzB0mmv58fh3KiJ_22qX9NnuFtsVTu95koxZMCt7hha9sa1N3PNmYfIh4HPz2KIx39d4k7Qxg6_CzTvugk_XuEp02uo1w9c8L9DIeLYfTbP4wmQ3LeWapGqRMFabKBzyvGG1UZXTNZVU3SinJaC4qUTdcEgmM8jyXoqIGcgMcDPvLTPGGX6Cb49cCwGoX7FaHblUUhaSC8F-pHWpK</recordid><startdate>202302</startdate><enddate>202302</enddate><creator>Kim, Hyo-Jin</creator><creator>Yoo, Ji-Hoon</creator><creator>Park, Wan-Soo</creator><creator>Yun, Seung-Won</creator><creator>Jo, Hyeon-Bhin</creator><creator>Lee, In-Geun</creator><creator>Kim, Tae-Woo</creator><creator>Tsutsumi, Takuya</creator><creator>Sugiyama, Hiroki</creator><creator>Matsuzaki, Hideaki</creator><creator>Lee, Jae-Hak</creator><creator>Kim, Dae-Hyun</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><orcidid>https://orcid.org/0000-0001-5769-4232</orcidid><orcidid>https://orcid.org/0000-0003-0234-5080</orcidid><orcidid>https://orcid.org/0000-0002-5078-606X</orcidid><orcidid>https://orcid.org/0000-0002-6659-9066</orcidid><orcidid>https://orcid.org/0000-0001-7775-6680</orcidid><orcidid>https://orcid.org/0000-0002-5629-4760</orcidid><orcidid>https://orcid.org/0000-0002-6301-857X</orcidid><orcidid>https://orcid.org/0000-0002-8084-7281</orcidid><orcidid>https://orcid.org/0000-0001-5332-5114</orcidid><orcidid>https://orcid.org/0000-0002-0242-6983</orcidid></search><sort><creationdate>202302</creationdate><title>A New Methodology to Analyze Carrier Transport Properties for InxGa1−xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation</title><author>Kim, Hyo-Jin ; Yoo, Ji-Hoon ; Park, Wan-Soo ; Yun, Seung-Won ; Jo, Hyeon-Bhin ; Lee, In-Geun ; Kim, Tae-Woo ; Tsutsumi, Takuya ; Sugiyama, Hiroki ; Matsuzaki, Hideaki ; Lee, Jae-Hak ; Kim, Dae-Hyun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-79cb8538b21f7bcad36bdf77762184b4df3606e2138864b1ce8ce3ec2218273f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Behavioral sciences</topic><topic>effective mobility</topic><topic>Electron mobility</topic><topic>HEMTs</topic><topic>InₓGa₂₋ₓAs and HEMT</topic><topic>Logic gates</topic><topic>MODFETs</topic><topic>saturation velocity</topic><topic>Transconductance</topic><topic>Velocity measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Hyo-Jin</creatorcontrib><creatorcontrib>Yoo, Ji-Hoon</creatorcontrib><creatorcontrib>Park, Wan-Soo</creatorcontrib><creatorcontrib>Yun, Seung-Won</creatorcontrib><creatorcontrib>Jo, Hyeon-Bhin</creatorcontrib><creatorcontrib>Lee, In-Geun</creatorcontrib><creatorcontrib>Kim, Tae-Woo</creatorcontrib><creatorcontrib>Tsutsumi, Takuya</creatorcontrib><creatorcontrib>Sugiyama, Hiroki</creatorcontrib><creatorcontrib>Matsuzaki, Hideaki</creatorcontrib><creatorcontrib>Lee, Jae-Hak</creatorcontrib><creatorcontrib>Kim, Dae-Hyun</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Hyo-Jin</au><au>Yoo, Ji-Hoon</au><au>Park, Wan-Soo</au><au>Yun, Seung-Won</au><au>Jo, Hyeon-Bhin</au><au>Lee, In-Geun</au><au>Kim, Tae-Woo</au><au>Tsutsumi, Takuya</au><au>Sugiyama, Hiroki</au><au>Matsuzaki, Hideaki</au><au>Lee, Jae-Hak</au><au>Kim, Dae-Hyun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A New Methodology to Analyze Carrier Transport Properties for InxGa1−xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2023-02</date><risdate>2023</risdate><volume>44</volume><issue>2</issue><spage>229</spage><epage>232</epage><pages>229-232</pages><issn>0741-3106</issn><coden>EDLEDZ</coden><abstract><![CDATA[Conventional techniques to characterize the carrier transport properties in high-electron-mobility transistors do not account for the effect of each individual unit process and device integration, and can be challenging to use for short-channel devices. To overcome this, we have developed a new technique that consists of measurement and analysis of the transconductance scaling behavior. The proposed <inline-formula> <tex-math notation="LaTeX">{g}_{m} </tex-math></inline-formula> modeling technique yielded the effective mobility, <inline-formula> <tex-math notation="LaTeX">\mu _{n\_{}{\textit {eff}}} </tex-math></inline-formula>, and saturation velocity, <inline-formula> <tex-math notation="LaTeX">{v}_{\textit {sat}} </tex-math></inline-formula> for fabricated InxGa<inline-formula> <tex-math notation="LaTeX">_{{1}-{x}} </tex-math></inline-formula>As Quantum-Well (QW) HEMTs, correlating the carrier transport properties to the device characteristics. This helps illuminate the physics of the carrier transport properties of HEMTs from the mobility relevant to the velocity saturation regimes.]]></abstract><pub>IEEE</pub><doi>10.1109/LED.2022.3230966</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-5769-4232</orcidid><orcidid>https://orcid.org/0000-0003-0234-5080</orcidid><orcidid>https://orcid.org/0000-0002-5078-606X</orcidid><orcidid>https://orcid.org/0000-0002-6659-9066</orcidid><orcidid>https://orcid.org/0000-0001-7775-6680</orcidid><orcidid>https://orcid.org/0000-0002-5629-4760</orcidid><orcidid>https://orcid.org/0000-0002-6301-857X</orcidid><orcidid>https://orcid.org/0000-0002-8084-7281</orcidid><orcidid>https://orcid.org/0000-0001-5332-5114</orcidid><orcidid>https://orcid.org/0000-0002-0242-6983</orcidid></addata></record>
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source IEEE Electronic Library (IEL) Journals
subjects Behavioral sciences
effective mobility
Electron mobility
HEMTs
InₓGa₂₋ₓAs and HEMT
Logic gates
MODFETs
saturation velocity
Transconductance
Velocity measurement
title A New Methodology to Analyze Carrier Transport Properties for InxGa1−xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T23%3A55%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20New%20Methodology%20to%20Analyze%20Carrier%20Transport%20Properties%20for%20InxGa1%E2%88%92xAs%20Quantum-Well%20High-Electron%20Mobility%20Transistors%20From%20Transconductance%20in%20Saturation&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Kim,%20Hyo-Jin&rft.date=2023-02&rft.volume=44&rft.issue=2&rft.spage=229&rft.epage=232&rft.pages=229-232&rft.issn=0741-3106&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2022.3230966&rft_dat=%3Cieee%3E9996140%3C/ieee%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i175t-79cb8538b21f7bcad36bdf77762184b4df3606e2138864b1ce8ce3ec2218273f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=9996140&rfr_iscdi=true