Improved high-frequency output equivalent circuit modelling for MOSFETs

An improved MOSFET output equivalent circuit model is proposed to greatly reduce the Y22-parameter error of a conventional one in the high-frequency range more than 10 GHz. In this model, a new parallel RC network is connected in series with the drain–source capacitance to model the ac current crowd...

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Bibliographic Details
Published in:Electronics letters 2015-11, Vol.51 (24), p.2045-2047
Main Authors: Hong, Seoyoung, Lee, Seonghearn
Format: Article
Language:English
Subjects:
AC current crowding phenomenon
Alternating current
Capacitance
Crowding
drain–source capacitance
Equivalent circuits
Errors
high‐frequency output equivalent circuit modelling
metal oxide semiconductor field effect transistor
microwave field effect transistors
MOSFET
MOSFETs
Networks
parallel RC network
RC circuits
Saturation
semiconductor device models
Semiconductor technology
vertically distributed RC effect
Y‐parameter error
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Description
Summary:An improved MOSFET output equivalent circuit model is proposed to greatly reduce the Y22-parameter error of a conventional one in the high-frequency range more than 10 GHz. In this model, a new parallel RC network is connected in series with the drain–source capacitance to model the ac current crowding phenomenon due to the vertically distributed RC effect in the saturation region. Its accuracy is clearly validated by finding much better agreement up to 40 GHz between measured and modelled Y22-parameter than the conventional one.
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2015.2946