Highly sensitive resonant pressure sensor based on mode-localisation effect

A novel micro-silicon resonant pressure sensor with two mechanically coupled resonators is presented. When pressure acts on the diaphragm, the perturbed stress will cause stiffness perturbation, leading to mode-localisation phenomenon. Therefore, pressure can be sensed by measuring the amplitude rat...

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Bibliographic Details
Published in:Electronics letters 2018-07, Vol.54 (14), p.882-884
Main Authors: Hu, Zongda, Zhao, Qi
Format: Article
Language:English
Subjects:
diaphragm
diaphragms
elemental semiconductors
Instrumentation and measurement
mechanically coupled resonators
micromechanical resonators
microsensors
microsilicon resonant pressure sensor
mode‐localisation phenomenon effect
perturbed stress
pressure measurement
pressure sensors
relative amplitude ratio shift measurement
silicon
silicon‐on‐insulator
silicon‐on‐insulator wafer
stiffness perturbation
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Description
Summary:A novel micro-silicon resonant pressure sensor with two mechanically coupled resonators is presented. When pressure acts on the diaphragm, the perturbed stress will cause stiffness perturbation, leading to mode-localisation phenomenon. Therefore, pressure can be sensed by measuring the amplitude ratio shift. This novel structure is achieved by fabrication on silicon-on-insulator wafer. The measured result shows that the relative amplitude ratio shift (86,819.9 ppm/kPA) is 197.5 times higher than the shift in resonance frequency (439.6 ppm/kPA).
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2018.0353