Stretched tunnelling body contact structure for suppressing the FBE in a vertical cell DRAM

Vertical cell transistor is necessary to drastically reduce the chip size of the dynamic random access memory. This structure has a great advantage in terms of shrinkage, but it also has the disadvantage of increasing the OFF-state current by causing floating body effect (FBE). For the first time, i...

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Bibliographic Details
Published in:Electronics letters 2019-11, Vol.55 (23), p.1252-1253
Main Authors: Cho, Y.S, Choi, P.H, Kim, K.H, Park, J.M, Hwang, Y.S, Hong, H.S, Lee, K.P, Choi, B.D
Format: Article
Language:English
Subjects:
buried body
DRAM chips
dynamic random access memory
FBE
flexible electronics
floating body effect
n+ active layer
OFF‐state current
p+ layer
Semiconductor technology
stretched tunnelling body contact structure
stretched tunnelling diode
transistor circuits
tunnel diodes
vertical cell DRAM
vertical cell transistor
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Summary:Vertical cell transistor is necessary to drastically reduce the chip size of the dynamic random access memory. This structure has a great advantage in terms of shrinkage, but it also has the disadvantage of increasing the OFF-state current by causing floating body effect (FBE). For the first time, it is demonstrated that a stretched tunnelling diode, which consists of a p+ layer next to the n+ active layer in the buried body, leads to a drastically suppressed FBE. The OFF-state current is sharply reduced by about seven orders compared with a conventional structure. Furthermore, the decrease in the OFF-state current is at minimum when the length of the stretched p + region is approximately half the channel length (Lp/L=1/2).
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2019.2541