In-depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation

In this study, the authors aim at investigating the static electro-thermal behaviour of two new generations of power silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFETs). The studied devices are commercialised and have a vertical structure. Two approaches are followed: de...

Full description

Saved in:
Bibliographic Details
Published in:IET circuits, devices & systems devices & systems, 2020-03, Vol.14 (2), p.222-228
Main Authors: Jouha, Wadia, El Oualkadi, Ahmed, Dherbécourt, Pascal, Masmoudi, Mohamed, Joubert, Eric
Format: Article
Language:English
Subjects:
associated parameters
Commercialization
compact modelling
Condensed Matter
Electric fields
Field effect transistors
Impact resistance
in-depth analysis
Materials Science
Metal oxide semiconductors
Modelling
MOSFET
MOSFETs
parameter estimation
Parameters
parameters extraction
Physical properties
Physical simulation
Physics
power MOSFET
power silicon carbide metal oxide semiconductor field effect transistors
Research Article
saturation region transconductance
Scanning electron microscopy
semiconductor device models
Semiconductor devices
SiC
Silicon carbide
silicon compounds
Simulation
static behaviour
static electro-thermal behaviour
Thermal simulation
Thermodynamic properties
Threshold voltage
Transconductance
Transistors
transverse electric field parameter
vertical structure
voltage 1200.0 V
voltage 900.0 V
wide band gap semiconductors
Citations: Items that this one cites
Items that cite this one
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, the authors aim at investigating the static electro-thermal behaviour of two new generations of power silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFETs). The studied devices are commercialised and have a vertical structure. Two approaches are followed: device modelling and physical simulation. An improved compact model based on an accurate method of parameters extraction is introduced. The simulation results obtained with this method perfectly fit the measurements. The parameters extracted precisely from the model (threshold voltage, saturation region transconductance and transverse electric field parameter) are used to accurately analyse the static behaviour of 1200 V Gen 2 and 900 V Gen 3 SiC MOSFETs. Physical simulation is conducted to understand the impact of the temperature and the physical parameters on the threshold voltage and the on-state resistance.
ISSN:1751-858X
1751-8598
1751-8598
DOI:10.1049/iet-cds.2018.5509