PL of low-density InAs/GaAs quantum dots with different bimodal populations

Optical response of the indium arsenide (InAs)/gallium arsenide (GaAs) quantum dots (QDs) with a bimodal distribution is investigated through varying an initial GaAs capping layer between 35 and 18 monolayers. Photoluminescence (PL) measurements confirm that a thinner initial capping layer can reduc...

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Bibliographic Details
Published in:Micro & nano letters 2017-09, Vol.12 (9), p.599-604
Main Authors: Wang, Ying, Sheng, Xinzhi, Liu, Yao, Liang, Baolai, Li, Xiaoli, Guo, Qinglin, Mazur, Yuriy I, Ware, Morgan E, Salamo, Gregory J
Format: Article
Language:English
Subjects:
Arsenides
bimodal distribution
bimodal populations
Capping
capping layer
carrier transfer
Gallium arsenide
III‐V semiconductors
InAs‐GaAs
Indium arsenides
indium compounds
Intermetallic compounds
low‐density quantum dots
monolayers
optical response
optoelectronic device applications
Optoelectronic devices
Photoluminescence
PL quenching
Populations
Quantum dots
Quenching
radiation quenching
semiconductor quantum dots
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Summary:Optical response of the indium arsenide (InAs)/gallium arsenide (GaAs) quantum dots (QDs) with a bimodal distribution is investigated through varying an initial GaAs capping layer between 35 and 18 monolayers. Photoluminescence (PL) measurements confirm that a thinner initial capping layer can reduce the QD dimensions and also modify the population ratio between the large QDs and the small QDs. Therefore, PL quenching related to QD dimension and carrier transfer between the bimodal QD populations has been affected. Manipulation of the initial GaAs capping layer provides a feasible approach to tailor the formation and optical performance of InAs QDs for optoelectronic device applications.
ISSN:1750-0443
1750-0443
DOI:10.1049/mnl.2016.0779