Enhancement of Magnetic Tunnel Junction

Modern MRAM typically employs Magnetic Tunnel Junctions (MTJs) as storage elements. The MTJ is a device based on quantum mechanical tunneling of spin-polarized electrons through a very thin insulator. The relative magnetization orientations of two ferromagnetic layers separated by this insulating la...

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Bibliographic Details
Published in:International Journal of Physical and Social Sciences 2013-06, Vol.3 (6), p.192-202
Main Authors: Ajin, A.S, Rajeena, F, Swetha, K
Format: Article
Language:English
Subjects:
MTJ
switching speed of MTJ
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Summary:Modern MRAM typically employs Magnetic Tunnel Junctions (MTJs) as storage elements. The MTJ is a device based on quantum mechanical tunneling of spin-polarized electrons through a very thin insulator. The relative magnetization orientations of two ferromagnetic layers separated by this insulating layer determine the resistance of the MTJ structure. MRAM cells are designed to have two stable magnetic states that correspond to high or low resistance values, and to retain those values without any applied power. The cells are read by sensing the resistance to determine if the state is high or low. This resistance-based approach is distinctly different from commonly available commercial memories, such as DRAM and Flash memory that are based on stored charge. The present work has been carried out with an aim to improving the Free layer switching mechanism of MTJ. Switching speed distribution of the different free layer material compositions are compared by VSM analysis.
ISSN:2249-5894