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Characterization of Transverse Piezoelectric Properties of c-Axis Oriented PbTiO3 Thin Films
In this study, we evaluated transverse piezoelectric properties of c-axis oriented PbTiO 3 (PT) thin films from the actuation of the PT/MgO unimorphs. The PT films were grown on Pt/MgO substrates using rf-sputtering technique. X-ray diffraction measurements revealed that the PT films exhibited highl...
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Published in: | Ferroelectrics 2005-01, Vol.327 (1), p.91-95 |
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container_start_page | 91 |
container_title | Ferroelectrics |
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creator | Kanno, Isaku Kogure, Shunsuke Tabata, Daiki Nakano, Kazuki Suzuki, Takaaki Kotera, Hidetoshi Wasa, Kiyotaka |
description | In this study, we evaluated transverse piezoelectric properties of c-axis oriented PbTiO
3
(PT) thin films from the actuation of the PT/MgO unimorphs. The PT films were grown on Pt/MgO substrates using rf-sputtering technique. X-ray diffraction measurements revealed that the PT films exhibited highly c-axis orientation with a-axis domains, suggesting epitaxial growth of the PT films. The piezoelectric characteristics of the PT films were estimated by the measurements of tip deflection of the unimorph cantilevers composed of PT films and MgO substrates. The PT cantilevers showed excellent linear piezoelectric deflection even with the application of large reverse voltage to the polar direction. The stable piezoelectricity of the PT films is attributed to not only large coercive field larger than their break down field but the highly c-axis orientation of PT films. We estimated piezoelectric coefficient e
31
of the PT thin films and obtained large transverse piezoelectricity of e
31
= −1.77 C/m
2
which is two times larger than that of the PT single crystals. |
doi_str_mv | 10.1080/00150190500316416 |
format | article |
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3
(PT) thin films from the actuation of the PT/MgO unimorphs. The PT films were grown on Pt/MgO substrates using rf-sputtering technique. X-ray diffraction measurements revealed that the PT films exhibited highly c-axis orientation with a-axis domains, suggesting epitaxial growth of the PT films. The piezoelectric characteristics of the PT films were estimated by the measurements of tip deflection of the unimorph cantilevers composed of PT films and MgO substrates. The PT cantilevers showed excellent linear piezoelectric deflection even with the application of large reverse voltage to the polar direction. The stable piezoelectricity of the PT films is attributed to not only large coercive field larger than their break down field but the highly c-axis orientation of PT films. We estimated piezoelectric coefficient e
31
of the PT thin films and obtained large transverse piezoelectricity of e
31
= −1.77 C/m
2
which is two times larger than that of the PT single crystals.</description><identifier>ISSN: 0015-0193</identifier><identifier>EISSN: 1563-5112</identifier><identifier>DOI: 10.1080/00150190500316416</identifier><identifier>CODEN: FEROA8</identifier><language>eng</language><publisher>London: Taylor & Francis Group</publisher><subject>c-axis orientation ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Exact sciences and technology ; Niobates, titanates, tantalates, pzt ceramics, etc ; PbTiO ; Physics ; piezoelectric ; Piezoelectricity and electromechanical effects ; thin films</subject><ispartof>Ferroelectrics, 2005-01, Vol.327 (1), p.91-95</ispartof><rights>Copyright Taylor & Francis Group, LLC 2005</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23929,23930,25139,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17773155$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kanno, Isaku</creatorcontrib><creatorcontrib>Kogure, Shunsuke</creatorcontrib><creatorcontrib>Tabata, Daiki</creatorcontrib><creatorcontrib>Nakano, Kazuki</creatorcontrib><creatorcontrib>Suzuki, Takaaki</creatorcontrib><creatorcontrib>Kotera, Hidetoshi</creatorcontrib><creatorcontrib>Wasa, Kiyotaka</creatorcontrib><title>Characterization of Transverse Piezoelectric Properties of c-Axis Oriented PbTiO3 Thin Films</title><title>Ferroelectrics</title><description>In this study, we evaluated transverse piezoelectric properties of c-axis oriented PbTiO
3
(PT) thin films from the actuation of the PT/MgO unimorphs. The PT films were grown on Pt/MgO substrates using rf-sputtering technique. X-ray diffraction measurements revealed that the PT films exhibited highly c-axis orientation with a-axis domains, suggesting epitaxial growth of the PT films. The piezoelectric characteristics of the PT films were estimated by the measurements of tip deflection of the unimorph cantilevers composed of PT films and MgO substrates. The PT cantilevers showed excellent linear piezoelectric deflection even with the application of large reverse voltage to the polar direction. The stable piezoelectricity of the PT films is attributed to not only large coercive field larger than their break down field but the highly c-axis orientation of PT films. We estimated piezoelectric coefficient e
31
of the PT thin films and obtained large transverse piezoelectricity of e
31
= −1.77 C/m
2
which is two times larger than that of the PT single crystals.</description><subject>c-axis orientation</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Exact sciences and technology</subject><subject>Niobates, titanates, tantalates, pzt ceramics, etc</subject><subject>PbTiO</subject><subject>Physics</subject><subject>piezoelectric</subject><subject>Piezoelectricity and electromechanical effects</subject><subject>thin films</subject><issn>0015-0193</issn><issn>1563-5112</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFkUFLAzEQhYMoWKs_wNte9Laa2Ww2DXgpxapQaA97FJZsdpZG0k1NUm37691iPfXgaRjmew_eG0JugT4AHdFHSoFTkJRTyqDIoTgjA-AFSzlAdk4Gh3vaA-ySXIXw0a8sz-WAvE-Wyisd0Zu9isZ1iWuT0qsufKEPmCwM7h1a1NEbnSy8W6OPBsMB0-l4a0Iy9wa7iE2yqEszZ0m5NF0yNXYVrslFq2zAm-McknL6XE5e09n85W0ynqWGFRDTukbJmWDIGip0LnOhG160ucxqWVOpdZ43GoHqrBEapGz7hIAUIRNMYMGG5P7Xdu3d5wZDrFYmaLRWdeg2ocpGfS9cyB68O4IqaGXbPqY2oVp7s1J-V4EQggHnPSd-OdO1zq_Ut_O2qaLaWef_RCeFV3Ebe-XTv0oGtDr87NSC_QCIjoiD</recordid><startdate>20050101</startdate><enddate>20050101</enddate><creator>Kanno, Isaku</creator><creator>Kogure, Shunsuke</creator><creator>Tabata, Daiki</creator><creator>Nakano, Kazuki</creator><creator>Suzuki, Takaaki</creator><creator>Kotera, Hidetoshi</creator><creator>Wasa, Kiyotaka</creator><general>Taylor & Francis Group</general><general>Taylor and Francis</general><scope>IQODW</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050101</creationdate><title>Characterization of Transverse Piezoelectric Properties of c-Axis Oriented PbTiO3 Thin Films</title><author>Kanno, Isaku ; Kogure, Shunsuke ; Tabata, Daiki ; Nakano, Kazuki ; Suzuki, Takaaki ; Kotera, Hidetoshi ; Wasa, Kiyotaka</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i361t-bbe95373e3d07c4947cd56f492b9b09cc44dce10c2d7c199f3161e0e12737e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>c-axis orientation</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Exact sciences and technology</topic><topic>Niobates, titanates, tantalates, pzt ceramics, etc</topic><topic>PbTiO</topic><topic>Physics</topic><topic>piezoelectric</topic><topic>Piezoelectricity and electromechanical effects</topic><topic>thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kanno, Isaku</creatorcontrib><creatorcontrib>Kogure, Shunsuke</creatorcontrib><creatorcontrib>Tabata, Daiki</creatorcontrib><creatorcontrib>Nakano, Kazuki</creatorcontrib><creatorcontrib>Suzuki, Takaaki</creatorcontrib><creatorcontrib>Kotera, Hidetoshi</creatorcontrib><creatorcontrib>Wasa, Kiyotaka</creatorcontrib><collection>Pascal-Francis</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Ferroelectrics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kanno, Isaku</au><au>Kogure, Shunsuke</au><au>Tabata, Daiki</au><au>Nakano, Kazuki</au><au>Suzuki, Takaaki</au><au>Kotera, Hidetoshi</au><au>Wasa, Kiyotaka</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of Transverse Piezoelectric Properties of c-Axis Oriented PbTiO3 Thin Films</atitle><jtitle>Ferroelectrics</jtitle><date>2005-01-01</date><risdate>2005</risdate><volume>327</volume><issue>1</issue><spage>91</spage><epage>95</epage><pages>91-95</pages><issn>0015-0193</issn><eissn>1563-5112</eissn><coden>FEROA8</coden><abstract>In this study, we evaluated transverse piezoelectric properties of c-axis oriented PbTiO
3
(PT) thin films from the actuation of the PT/MgO unimorphs. The PT films were grown on Pt/MgO substrates using rf-sputtering technique. X-ray diffraction measurements revealed that the PT films exhibited highly c-axis orientation with a-axis domains, suggesting epitaxial growth of the PT films. The piezoelectric characteristics of the PT films were estimated by the measurements of tip deflection of the unimorph cantilevers composed of PT films and MgO substrates. The PT cantilevers showed excellent linear piezoelectric deflection even with the application of large reverse voltage to the polar direction. The stable piezoelectricity of the PT films is attributed to not only large coercive field larger than their break down field but the highly c-axis orientation of PT films. We estimated piezoelectric coefficient e
31
of the PT thin films and obtained large transverse piezoelectricity of e
31
= −1.77 C/m
2
which is two times larger than that of the PT single crystals.</abstract><cop>London</cop><pub>Taylor & Francis Group</pub><doi>10.1080/00150190500316416</doi><tpages>5</tpages></addata></record> |
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subjects | c-axis orientation Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Niobates, titanates, tantalates, pzt ceramics, etc PbTiO Physics piezoelectric Piezoelectricity and electromechanical effects thin films |
title | Characterization of Transverse Piezoelectric Properties of c-Axis Oriented PbTiO3 Thin Films |
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