Measurement of current gains of high and low power thyristors and their dependence upon current, temperature and gold-doping

Small-signal low-frequency current gains of the npn and pnp transistor sections of high and low power thyristors were measured by a three-terminal technique. From their dependence upon current and temperature it was found that the saturation current dependence of the isolated centre junction primari...

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Bibliographic Details
Published in:International journal of electronics 1974-07, Vol.37 (1), p.127-140
Main Authors: HOGARTH, C. A., JOADAT-GHASSABI, M. R., FULOP, W.
Format: Article
Language:English
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Summary:Small-signal low-frequency current gains of the npn and pnp transistor sections of high and low power thyristors were measured by a three-terminal technique. From their dependence upon current and temperature it was found that the saturation current dependence of the isolated centre junction primarily determines temperature stability. Current gain measured at a series of temperatures, and plotted para-metrically with anode current, qualitatively correctly predicts the temperature dependence of the two-terminal latching currents. Gold-doping predictably leads to a low current gain for the pnp section.
ISSN:0020-7217
1362-3060
DOI:10.1080/00207217408900503