Design of a Resonant-Cavity-Enhanced p-i-n GaN/AlxGa1-xN Photodetector

A resonant-cavity-enhanced p-i-n photodetector has been designed and analyzed to operate at a wavelength of 360 nm based on the Al x Ga 1-x N material system. The novel approach has been adopted of using epitaxial AlN/Al x Ga 1-x N quarter-wave stacks as the distributed Bragg reflector that serves a...

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Bibliographic Details
Published in:Fiber and integrated optics 2001-03, Vol.20 (2), p.125-131
Main Author: T. Li, J. C. Carrano, C. J. Eiting, P. A. Grudowski, D. J. H. Lambert, H. K. Kwon, R. D. Dupuis, J. C. Campbell, R. T. Tober
Format: Article
Language:English
Subjects:
Ultraviolet Photodetector Resonant Cavity Iii-V Nitrides Bragg Reflector Interface Roughness
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Summary:A resonant-cavity-enhanced p-i-n photodetector has been designed and analyzed to operate at a wavelength of 360 nm based on the Al x Ga 1-x N material system. The novel approach has been adopted of using epitaxial AlN/Al x Ga 1-x N quarter-wave stacks as the distributed Bragg reflector that serves as the front mirror. An Al x Ga 1-x N absorptive filter layer is incorporated to suppress all but one resonant mode to ensure single, narrow-band operation. This device structure is projected to achieve wavelength selective, high speed, and high quantum efficiency operation in the ultraviolet. MOCVD-grown 6 1/2-pair AlN/Al x Ga 1-x
ISSN:0146-8030
1096-4681
DOI:10.1080/01468030119593