Photon counting for quantum key distribution with peltier cooled InGaAs/InP APDs

The performance of three types of InGaAs/InP avalanche photodiodes is investigated for photon counting at 1550 nm in the temperature range of thermoelectric cooling. The best one yields a dark count probability of 2.8 × 10 −5 per gate (2.4 ns) at a detection efficiency of 10% and a temperature of -6...

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Bibliographic Details
Published in:Journal of modern optics 2001-11, Vol.48 (13), p.1967-1981
Main Authors: Stucki, Damien, Ribordy, GrÉGoire, Stefanov, AndrÉ, Zbinden, Hugo, Rarity, John G., Wall, Tom
Format: Article
Language:English
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Summary:The performance of three types of InGaAs/InP avalanche photodiodes is investigated for photon counting at 1550 nm in the temperature range of thermoelectric cooling. The best one yields a dark count probability of 2.8 × 10 −5 per gate (2.4 ns) at a detection efficiency of 10% and a temperature of -60°C. The afterpulse probability and the timing jitter are also studied. The results obtained are compared with those of other papers and applied to the simulation of a quantum key distribution system. An error rate of 10% would be obtained after 54 km.
ISSN:0950-0340
1362-3044
DOI:10.1080/09500340108240900