Energy deposition distributions caused by fast neutrons in converter type silicon detectors

• Published in: Radiation effects and defects in solids 2002-01, Vol.157 (4), p.427-444
• Main Authors: Schütz, R., Fehrenbacher, G., Biersack, J. P., Wielunski, M., Wahl, W.
• Format: Article
• Language: English
• Subjects: Exact sciences and technology; Experimental methods and instrumentation for elementary-particle and nuclear physics; Monte Carlo Code; Neutron Detection; Nuclear physics; Physics; Radiation detectors, dosimeters; Silicon Detector; Solid-state detectors
• ISSN: 1042-0150; 1029-4953
• DOI: 10.1080/10420150214039

Polyethylene converter silicon detectors have been developed as part of a dosimetry system for the application in neutron fields. Signals have been investigated which are mainly caused by reactions occurring when neutrons hit the PE converter or the silicon diode directly. In this work, neutron interactions in the components of a PE converter silicon sensor have been calculated to determine energy deposition distributions for neutron energies from 1.2 v MeV to 14.8 v MeV. Experiments in quasi-monoenergetic neutron fields have been performed. For the simulation of the neutron interactions with the detector layers, the GSF neutron interaction code NISD has been applied. The transport of ions has been calculated separately by means of the program TRIM. It has been shown that by the use of these concepts and models, a rather good agreement of measured and computed pulse height distributions can be obtained and, consequently, the response of converter type detectors to neutron radiation can be determined.