Incorporation of Pb, Ti, and Zr into MOCVD grown PbZrxTi1-xO3 thin films

Metal Organic Chemical Vapour Deposition was used to grow PbTiO 3 and PbZr x Ti 1-x O 3 thin films on Pt/Ti/SiO 2 /Si substrates. Incorporation of Pb and Ti into PbTiO 3 was studied as a function of the growth temperature, gas phase composition, and reactor pressure, keeping the other deposition par...

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Bibliographic Details
Published in:Integrated ferroelectrics 2000-01, Vol.30 (1-4), p.71-79
Main Authors: Rössinger, S. A., Moret, M. P., Misat, S. I., Hageman, P. R., Van der Linden, H. A., Haverkamp, E., Corbeek, W. H. M., Larsen, P. K.
Format: Article
Language:English
Subjects:
chemical analysis
etching
ICP-AES
MOCVD
PZT
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Summary:Metal Organic Chemical Vapour Deposition was used to grow PbTiO 3 and PbZr x Ti 1-x O 3 thin films on Pt/Ti/SiO 2 /Si substrates. Incorporation of Pb and Ti into PbTiO 3 was studied as a function of the growth temperature, gas phase composition, and reactor pressure, keeping the other deposition parameters constant. The stoichiometric homogeneity in lateral and in vertical direction was measured on optimised PbTiO 3 and PbZr x Ti 1-x O 3 layers using Inductive Coupled Plasma - Atomic Emission Spectroscopy.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584580008222255