Electrical properties of magnetron sputtered thin BaSrTiO3 films depending on deposition conditions

The influence of synthesis temperature and target composition on electrophysical properties of ion-plasma deposited BaSrTiO 3 films is investigated. The film growth parameters, which provide the sufficient combination of tunability and loss factor of planar capacitor for microwave application, are d...

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Bibliographic Details
Published in:Integrated ferroelectrics 2001-01, Vol.39 (1-4), p.367-373
Main Authors: Razumov, S., Tumarkin, A., Buslov, O., Gaidukov, M., Gagarin, A., Ivanov, A., Kozyrev, A., Song, Yong-Won, Park, Chan-Sik
Format: Article
Language:English
Subjects:
BaSrTiO
RF magnetron sputtering
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Summary:The influence of synthesis temperature and target composition on electrophysical properties of ion-plasma deposited BaSrTiO 3 films is investigated. The film growth parameters, which provide the sufficient combination of tunability and loss factor of planar capacitor for microwave application, are determined. That corresponds to the following parameters of the thin film BaSrTiO 3 capacitor: tunability n = 2.2, tanδ (0 V/μm) = 0.01, and tanδ (50 V/μm) = 0.003 at room temperature and 1 GHz. Results of microwave measurements of BaSrTiO 3 varactors up to 30 GHz are presented as well.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584580108011960