Ferroelectric and Piezoelectric Properties of 0.24Pb(Zn1/3Nb2/3)O3ċ0.384PbZrO3ċ0.376PbTiO3 Thin Films Crystallized by Hot Isostatic Pressing

Ferroelectric and piezoelectric properties of Pt/0.24Pb(Zn 1/3 Nb 2/3 )O 3 ċ0.384-PbZrO 3 ċ0.376PbTiO 3 (PZNZT)/PbTiO 3 /Pt capacitors fabricated by crystallizing amorphous PZNZT films under high pressures of 1.0-176.5 MPa using hot isostatic pressing (HIP) are investigated. All of films HIP-treated...

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Bibliographic Details
Published in:Integrated ferroelectrics 2004-01, Vol.63 (1), p.105-108
Main Authors: KOBUNE, MASAFUMI, KOJIMA, SHINICHI, NISHIOKA, YUSUKE, YAZAWA, TETSUO, FUJISAWA, HIRONORI, SHIMIZU, MASARU
Format: Article
Language:English
Subjects:
Crystallization
ferroelectric property
hot isostatic pressing
piezoelectric property
thin film
Online Access:Get full text
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Summary:Ferroelectric and piezoelectric properties of Pt/0.24Pb(Zn 1/3 Nb 2/3 )O 3 ċ0.384-PbZrO 3 ċ0.376PbTiO 3 (PZNZT)/PbTiO 3 /Pt capacitors fabricated by crystallizing amorphous PZNZT films under high pressures of 1.0-176.5 MPa using hot isostatic pressing (HIP) are investigated. All of films HIP-treated under high pressure over 17.7 MPa hardly showed the fatigue degradation up to the switching cycles of 3× 10 10 . From piezomeasurements using piezoresponse scanning force microscopy, it was found that the sample HIP-treated under 1.8 MPa exhibited the highest saturated piezoelectric coefficient.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584580490458892