C-Axis Oriented MOCVD YMnO3 Thin Film and Its Electrical Characteristics in MFIS FeTRAM

Yttrium manganate (YMO) thin films were prepared on SiO 2 buffered silicon as a candidate for ferroelectric transistor random access memory (FeTRAM). The films were deposited by flash evaporated MOCVD at low temperature and post annealed to crystallize the c-axis oriented hexagonal YMO phase. It is...

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Bibliographic Details
Published in:Integrated ferroelectrics 2004-01, Vol.68 (1), p.75-84
Main Authors: KIM, DAESIG, KLINGENSMITH, DAVID, DALTON, DAVID, OLARIU, VIOREL, GNADINGER, FRED, RAHMAN, MOSIUR, MAHMUD, ALI, KALKUR, T. S.
Format: Article
Language:English
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Summary:Yttrium manganate (YMO) thin films were prepared on SiO 2 buffered silicon as a candidate for ferroelectric transistor random access memory (FeTRAM). The films were deposited by flash evaporated MOCVD at low temperature and post annealed to crystallize the c-axis oriented hexagonal YMO phase. It is found that oxygen content and substrate temperature are major parameters determining c-axis orientation. For the electrical characteristics, P r (remnant polarization) ∼2 μ C/cm 2 and ϵ (dielectric constant) ∼ 20 are obtained in Pt/YMO/Pt structures. It is also found that a top buffer layer of 30 nm ZrO 2 helps to reduce the leakage current of Pt/top buffer/YMO/SiO 2 /Si stack to 10 − 7 A/cm 2 and improves the C-V memory window from 0.2 V to 2 V.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584580490895671