TUNABLE MICROWAVE INTEGRATED CIRCUITS USING BST THIN FILM CAPACITORS WITH DEVICE STRUCTURE OPTIMIZATION

The mechanism of losses in barium strontium titanate (BST) thin film capacitors is analyzed at the device level. A geometry dependent RF model is used to minimize the electrode loss. Results show the capacitors' RF quality factors can be further optimized through geometry. A tunable filter and...

Full description

Saved in:
Bibliographic Details
Published in:Integrated ferroelectrics 2005-12, Vol.77 (1), p.27-35
Main Authors: XU, HONGTAO, PERVEZ, NADIA K., YORK, ROBERT A.
Format: Article
Language:English
Subjects:
Barium strontium titanate
BST
MMIC
tunable filter
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The mechanism of losses in barium strontium titanate (BST) thin film capacitors is analyzed at the device level. A geometry dependent RF model is used to minimize the electrode loss. Results show the capacitors' RF quality factors can be further optimized through geometry. A tunable filter and a phase shifter are demonstrated using these design techniques. Successful integration of the BST process with GaN HEMT circuits in the form of a 5 GHz GaN HEMT oscillator is presented. BST thin film technology is shown to be useful for the design of frequency agile circuits and reduction of layout areas in various microwave applications.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584580500413681